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Other articles related with "traps"：
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78502 |
Mei-Ling Zeng(曾美玲), Yang Wang(汪洋), Xiang-Liang Jin(金湘亮), Yan Peng(彭艳), and Jun Luo(罗均) |
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Model and data of optically controlled tunable capacitor in silicon single-photon avalanche diode |
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Chin. Phys. B
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57305 |
Wen-Hao Zhang(张文浩), Ma-Guang Zhu(朱马光), Kang-Hua Yu(余康华), Cheng-Zhan Li(李诚瞻),Jun Wang(王俊), Li Xiang(向立), and Yu-Wei Wang(王雨薇) |
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Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms |
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Chin. Phys. B
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[Abstract]
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97401 |
Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬) |
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Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique |
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Chin. Phys. B
2022 Vol.31 (9): 97401-097401
[Abstract]
(317)
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[PDF 1088 KB]
(91)
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73702 |
Li-Jun Du(杜丽军), Yan-Song Meng(蒙艳松), Yu-Ling He(贺玉玲), and Jun Xie(谢军) |
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Numerical analysis of motional mode coupling of sympathetically cooled two-ion crystals |
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Chin. Phys. B
2021 Vol.30 (7): 73702-073702
[Abstract]
(440)
[HTML 1 KB]
[PDF 1029 KB]
(654)
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77305 |
Yi-Dong Yuan(原义栋), Dong-Yan Zhao(赵东艳), Yan-Rong Cao(曹艳荣), Yu-Bo Wang(王于波), Jin Shao(邵瑾), Yan-Ning Chen(陈燕宁), Wen-Long He(何文龙), Jian Du(杜剑), Min Wang(王敏), Ye-Ling Peng(彭业凌), Hong-Tao Zhang(张宏涛), Zhen Fu(付振), Chen Ren(任晨), Fang Liu(刘芳), Long-Tao Zhang(张龙涛), Yang Zhao(赵扬), Ling Lv(吕玲), Yi-Qiang Zhao(赵毅强), Xue-Feng Zheng(郑雪峰), Zhi-Mei Zhou(周芝梅), Yong Wan(万勇), and Xiao-Hua Ma(马晓华) |
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Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress |
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Chin. Phys. B
2021 Vol.30 (7): 77305-077305
[Abstract]
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(81)
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77303 |
Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇) |
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Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors |
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Chin. Phys. B
2021 Vol.30 (7): 77303-077303
[Abstract]
(475)
[HTML 1 KB]
[PDF 652 KB]
(97)
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123701 |
Li-Yong Wang(王立勇), Xiao Li(李潇), Kun-Peng Wang(王坤鹏), Yin-Xue Zhao(赵吟雪), Ke Di(邸克), Jia-Jia Du(杜佳佳), and Jian-Gong Hu(胡建功) |
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Interference properties of a trapped atom interferometer in two asymmetric optical dipole traps |
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Chin. Phys. B
2020 Vol.29 (12): 123701-
[Abstract]
(426)
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107302 |
Si-Qi Jing(荆思淇), Xiao-Hua Ma(马晓华), Jie-Jie Zhu(祝杰杰)†, Xin-Chuang Zhang(张新创), Si-Yu Liu(刘思雨), Qing Zhu(朱青), and Yue Hao(郝跃) |
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Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments |
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Chin. Phys. B
2020 Vol.29 (10): 107302-
[Abstract]
(587)
[HTML 1 KB]
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97301 |
Ji-Long Hao(郝继龙), Yun Bai(白云), Xin-Yu Liu(刘新宇), Cheng-Zhan Li(李诚瞻), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Jiang Lu(陆江), Sheng-Kai Wang(王盛凯) |
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Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation |
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Chin. Phys. B
2020 Vol.29 (9): 97301-097301
[Abstract]
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38501 |
He-Kun Zhang(章合坤), Xuan Tian(田璇), Jun-Peng He(何俊鹏), Zhe Song(宋哲), Qian-Qian Yu(蔚倩倩), Liang Li(李靓), Ming Li(李明), Lian-Cheng Zhao(赵连城), Li-Ming Gao(高立明) |
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Investigation of gate oxide traps effect on NAND flash memory by TCAD simulation |
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Chin. Phys. B
2020 Vol.29 (3): 38501-038501
[Abstract]
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37301 |
Xin-Yu Liu(刘新宇), Ji-Long Hao(郝继龙), Nan-Nan You(尤楠楠), Yun Bai(白云), Yi-Dan Tang(汤益丹), Cheng-Yue Yang(杨成樾), Sheng-Kai Wang(王盛凯) |
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High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation |
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Chin. Phys. B
2020 Vol.29 (3): 37301-037301
[Abstract]
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107301 |
Mei Ge(葛梅), Qing Cai(蔡青), Bao-Hua Zhang(张保花), Dun-Jun Chen(陈敦军), Li-Qun Hu(胡立群), Jun-Jun Xue(薛俊俊), Hai Lu(陆海), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer |
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Chin. Phys. B
2019 Vol.28 (10): 107301-107301
[Abstract]
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[PDF 1005 KB]
(264)
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67304 |
Si-Qin-Gao-Wa Bao(包斯琴高娃), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Ling Yang(杨凌), Bin Hou(侯斌), Qing Zhu(朱青), Jie-Jie Zhu(祝杰杰), Yue Hao(郝跃) |
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Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2019 Vol.28 (6): 67304-067304
[Abstract]
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73701 |
Jing-feng Xiang(项静峰), He-nan Cheng(程鹤楠), Xiang-kai Peng(彭向凯), Xin-wen Wang(王新文), Wei Ren(任伟), Jing-wei Ji(吉经纬), Kang-kang Liu(刘亢亢), Jian-bo Zhao(赵剑波), Lin Li(李琳), Qiu-zhi Qu(屈求智), Tang Li(李唐), Bin Wang(汪斌), Mei-feng Ye(叶美凤), Xin Zhao(赵鑫), Yuan-yuan Yao(姚媛媛), De-Sheng Lü(吕德胜), Liang Liu(刘亮) |
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Loss of cold atoms due to collisions with residual gases in free flight and in a magneto-optical trap |
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Chin. Phys. B
2018 Vol.27 (7): 73701-073701
[Abstract]
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[PDF 1190 KB]
(158)
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48503 |
Li-Hua Dai(戴丽华), Da-Wei Bi(毕大炜), Zhi-Yuan Hu(胡志远), Xiao-Nian Liu(刘小年), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌) |
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Research on the radiation hardened SOI devices with single-step Si ion implantation |
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Chin. Phys. B
2018 Vol.27 (4): 48503-048503
[Abstract]
(877)
[HTML 1 KB]
[PDF 1624 KB]
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127701 |
Qiu-Jie Sun(孙秋杰), Yu-Ming Zhang(张玉明), Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yi-Meng Zhang(张艺蒙), Cheng-Zhan Li(李诚瞻), Yan-Li Zhao(赵艳黎), Yi-Men Zhang(张义门) |
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Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO |
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Chin. Phys. B
2017 Vol.26 (12): 127701-127701
[Abstract]
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37104 |
Wenbo Li(李文波), Ling Li(李玲), Fangfang Wang(王方方), Liu Zheng(郑柳), Jinghua Xia(夏经华), Fuwen Qin(秦福文), Xiaolin Wang(王晓琳), Yongping Li(李永平), Rui Liu(刘瑞), Dejun Wang(王德君), Yan Pan(潘艳), Fei Yang(杨霏) |
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Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study |
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Chin. Phys. B
2017 Vol.26 (3): 37104-037104
[Abstract]
(713)
[HTML 1 KB]
[PDF 1782 KB]
(590)
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107106 |
Yuan-Gang Wang(王元刚), Zhi-Hong Feng(冯志红), Yuan-Jie Lv(吕元杰), Xin Tan(谭鑫), Shao-Bo Dun(敦少博), Yu-Long Fang(房玉龙), Shu-Jun Cai(蔡树军) |
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Modified model of gate leakage currents in AlGaN/GaN HEMTs |
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Chin. Phys. B
2016 Vol.25 (10): 107106-107106
[Abstract]
(639)
[HTML 1 KB]
[PDF 369 KB]
(328)
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97101 |
Yifan Jia(贾一凡), Hongliang Lv(吕红亮), Yingxi Niu(钮应喜), Ling Li(李玲), Qingwen Song(宋庆文), Xiaoyan Tang(汤晓燕), Chengzhan Li(李诚瞻), Yanli Zhao(赵艳黎), Li Xiao(肖莉), Liangyong Wang(王梁永), Guangming Tang(唐光明), Yimen Zhang(张义门), Yuming Zhang(张玉明) |
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Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices |
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Chin. Phys. B
2016 Vol.25 (9): 97101-097101
[Abstract]
(624)
[HTML 0 KB]
[PDF 775 KB]
(335)
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87701 |
Man-Hong Zhang(张满红) |
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Electron trapping properties at HfO2/SiO2 interface, studied by Kelvin probe force microscopy and theoretical analysis |
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Chin. Phys. B
2016 Vol.25 (8): 87701-087701
[Abstract]
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[PDF 293 KB]
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67305 |
Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Li-Xiang Chen(陈丽香), Yan-Rong Cao(曹艳荣), Yue Hao(郝跃) |
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Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure |
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Chin. Phys. B
2016 Vol.25 (6): 67305-067305
[Abstract]
(723)
[HTML 1 KB]
[PDF 508 KB]
(361)
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17305 |
Fang Zhong-Hui (方忠慧), Jiang Xiao-Fan (江小帆), Chen Kun-Ji (陈坤基), Wang Yue-Fei (王越飞), Li Wei (李伟), Xu Jun (徐骏) |
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Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiNx matrix by the influence of near-interface oxide traps |
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Chin. Phys. B
2015 Vol.24 (1): 17305-017305
[Abstract]
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[PDF 718 KB]
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88501 |
Chu Yu-Qiong (褚玉琼), Zhang Man-Hong (张满红), Huo Zong-Liang (霍宗亮), Liu Ming (刘明) |
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Comparison between N2 and O2 anneals on the integrity of an Al2O3/Si3N4/SiO2/Si memory gate stack |
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Chin. Phys. B
2014 Vol.23 (8): 88501-088501
[Abstract]
(806)
[HTML 1 KB]
[PDF 364 KB]
(458)
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57304 |
Zhang Yue (张月), Zhuo Qing-Qing (卓青青), Liu Hong-Xia (刘红侠), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET |
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Chin. Phys. B
2014 Vol.23 (5): 57304-057304
[Abstract]
(539)
[HTML 1 KB]
[PDF 303 KB]
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117302 |
Yang Li-Yuan(杨丽媛), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Pan Cai-Yuan(潘才渊), Ma Ji-Gang (马骥刚), Zhang Kai(张凯), and Ma Ping(马平) |
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High temperature characteristics of AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2011 Vol.20 (11): 117302-117302
[Abstract]
(1334)
[HTML 1 KB]
[PDF 359 KB]
(1800)
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124211 |
Ji Lian(季莲), Jiang De-Sheng(江德生), Zhang Shu-Ming(张书明), Liu Zong-Shun(刘宗顺), Zeng Chang(曾畅), Zhao De-Gang(赵德刚), Zhu Jian-Jun(朱建军), Wang Hui(王辉), Duan Li-Hong(段俐宏), and Yang Hui(杨辉) |
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Time delay in InGaN multiple quantum well laser diodes at room temperature |
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Chin. Phys. B
2010 Vol.19 (12): 124211-124211
[Abstract]
(1484)
[HTML 1 KB]
[PDF 273 KB]
(807)
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1601 |
Gu Wen-Ping(谷文萍), Duan Huan-Tao(段焕涛), Ni Jin-Yu(倪金玉), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), and Ma Xiao-Hua(马晓华) |
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High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2009 Vol.18 (4): 1601-1608
[Abstract]
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[HTML 1 KB]
[PDF 1865 KB]
(1038)
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5479 |
Hu Shi-Gang(胡仕刚),Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Chen Chi(陈炽), and Wu Xiao-Feng(吴笑峰) |
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Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature |
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Chin. Phys. B
2009 Vol.18 (12): 5479-5484
[Abstract]
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309 |
Cao Yan-Rong(曹艳荣), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Hu Shi-Gang(胡仕刚) |
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Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal--oxide--semiconductor field-effect transistors |
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Chin. Phys. B
2009 Vol.18 (1): 309-314
[Abstract]
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3565 |
Wan Jin-Yin(万金银), Wang Yu-Zhu(王育竹), and Liu Liang(刘亮) |
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Planar ion chip design for scalable quantum information processing |
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Chin. Phys. B
2008 Vol.17 (10): 3565-3573
[Abstract]
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[PDF 902 KB]
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1445 |
Liu Hong-Xia(刘红侠), Li Zhong-He(李忠贺), and Hao Yue(郝跃) |
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Degradation characteristics and mechanism of PMOSFETs under NBT--PBT--NBT stress |
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Chin. Phys. B
2007 Vol.16 (5): 1445-1449
[Abstract]
(1447)
[HTML 1 KB]
[PDF 458 KB]
(833)
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833 |
Li Zhong-He (李忠贺), Liu Hong-Xia (刘红侠), Hao Yue (郝跃) |
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The role of hydrogen in negative bias temperature instability of pMOSFET |
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Chin. Phys. B
2006 Vol.15 (4): 833-838
[Abstract]
(1517)
[HTML 1 KB]
[PDF 312 KB]
(1315)
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