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Other articles related with "optoelectronic"：
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126103 |
Cheng-Zhou Zhang(张城洲) and Xiao-Qian Fu(付小倩) |
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Applications and potentials of machine learning in optoelectronic materials research: An overview and perspectives |
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Chin. Phys. B
2023 Vol.32 (12): 126103-126103
[Abstract]
(111)
[HTML 0 KB]
[PDF 3403 KB]
(65)
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127301 |
Shanshan Chen(陈珊珊), Xinhao Zhang(张新昊), Guangcan Wang(王广灿), Shuo Chen(陈朔), Heqi Ma(马和奇), Tianyu Sun(孙天瑜), Baoyuan Man(满宝元), and Cheng Yang(杨诚) |
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Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction |
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Chin. Phys. B
2023 Vol.32 (12): 127301-127301
[Abstract]
(104)
[HTML 0 KB]
[PDF 2738 KB]
(24)
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118101 |
Yang Yang(杨洋), Chuanyu Fu(傅传玉), Shuo Ke(柯硕), Hangyuan Cui(崔航源), Xiao Fang(方晓), Changjin Wan(万昌锦), and Qing Wan(万青) |
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W-doped In2O3 nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity |
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Chin. Phys. B
2023 Vol.32 (11): 118101-118101
[Abstract]
(118)
[HTML 1 KB]
[PDF 1331 KB]
(77)
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108505 |
Ben Wu(吴奔), Tao Wei(魏涛), Jing Hu(胡敬), Ruirui Wang(王瑞瑞), Qianqian Liu(刘倩倩), Miao Cheng(程淼), Wanfei Li(李宛飞), Yun Ling(凌云), and Bo Liu(刘波) |
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Multilevel optoelectronic hybrid memory based on N-doped Ge2Sb2Te5 film with low resistance drift and ultrafast speed |
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Chin. Phys. B
2023 Vol.32 (10): 108505-108505
[Abstract]
(116)
[HTML 1 KB]
[PDF 5624 KB]
(65)
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18505 |
Rui Yu(余睿), Zhe Sheng(盛喆), Wennan Hu(胡文楠), Yue Wang(王越), Jianguo Dong(董建国), Haoran Sun(孙浩然), Zengguang Cheng(程增光), and Zengxing Zhang(张增星) |
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A field-effect WSe2/Si heterojunction diode |
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Chin. Phys. B
2023 Vol.32 (1): 18505-018505
[Abstract]
(257)
[HTML 1 KB]
[PDF 1074 KB]
(134)
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90702 |
Ling Liu(刘玲), Xiaoyan Wu(吴小龑), Guodong Liu(刘国栋), Tigang Ning(宁提纲),Jian Xu(许建), and Haidong You(油海东) |
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Optoelectronic oscillator-based interrogation system for Michelson interferometric sensors |
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Chin. Phys. B
2022 Vol.31 (9): 90702-090702
[Abstract]
(288)
[HTML 0 KB]
[PDF 868 KB]
(44)
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37104 |
Guoqi Zhao(赵国琪), Jiahao Xie(颉家豪), Kun Zhou(周琨), Bangyu Xing(邢邦昱), Xinjiang Wang(王新江), Fuyu Tian(田伏钰), Xin He(贺欣), and Lijun Zhang(张立军) |
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High-throughput computational material screening of the cycloalkane-based two-dimensional Dion—Jacobson halide perovskites for optoelectronics |
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Chin. Phys. B
2022 Vol.31 (3): 37104-037104
[Abstract]
(522)
[HTML 1 KB]
[PDF 3192 KB]
(213)
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104207 |
Li Zhang(张力), Wei-Ning Liu(刘卫宁), Yan-Zhou Wang(王艳周), Qi-Ming Liu(刘奇明), Jun-Shuai Li(栗军帅), Ya-Li Li(李亚丽), and De-Yan He(贺德衍) |
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Enhancing light absorption for organic solar cells using front ITO nanograting and back ultrathin Al layer |
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Chin. Phys. B
2021 Vol.30 (10): 104207-104207
[Abstract]
(344)
[HTML 0 KB]
[PDF 2564 KB]
(38)
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87801 |
Jintao Hong(洪锦涛), Fengyuan Zhang(张丰源), Zheng Liu(刘峥), Jie Jiang(蒋杰), Zhangting Wu(吴章婷), Peng Zheng(郑鹏), Hui Zheng(郑辉), Liang Zheng(郑梁), Dexuan Huo(霍德璇), Zhenhua Ni(倪振华), and Yang Zhang(张阳) |
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Achieving high-performance multilayer MoSe2 photodetectors by defect engineering |
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Chin. Phys. B
2021 Vol.30 (8): 87801-087801
[Abstract]
(348)
[HTML 1 KB]
[PDF 1009 KB]
(64)
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58504 |
Bo Liu(刘波), Tao Wei(魏涛), Jing Hu(胡敬), Wanfei Li(李宛飞), Yun Ling(凌云), Qianqian Liu(刘倩倩), Miao Cheng(程淼), and Zhitang Song(宋志棠) |
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Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage |
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Chin. Phys. B
2021 Vol.30 (5): 58504-058504
[Abstract]
(373)
[HTML 1 KB]
[PDF 3026 KB]
(237)
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38102 |
J H Lei(雷军辉), Q Tang(汤琼), J He(何军), and M Q Cai(蔡孟秋) |
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Stability and optoelectronic property of low-dimensional organic tin bromide perovskites |
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Chin. Phys. B
2021 Vol.30 (3): 38102-
[Abstract]
(387)
[HTML 1 KB]
[PDF 624 KB]
(63)
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28507 |
Boyao Cui(崔博垚), Yanhui Xing(邢艳辉), Jun Han(韩军), Weiming Lv(吕伟明), Wenxing Lv(吕文星), Ting Lei(雷挺), Yao Zhang(张尧), Haixin Ma(马海鑫), Zhongming Zeng(曾中明), and Baoshun Zhang(张宝顺) |
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Negative photoconductivity in low-dimensional materials |
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Chin. Phys. B
2021 Vol.30 (2): 28507-0
[Abstract]
(431)
[HTML 1 KB]
[PDF 1867 KB]
(379)
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17701 |
Xibo Yin(尹锡波), Yifan Shen(沈逸凡), Chaofan Xu(徐超凡), Jing He(贺靖), Junye Li(李俊烨), Haining Ji(姬海宁), Jianwei Wang(王建伟), Handong Li(李含冬), Xiaohong Zhu(朱小红), Xiaobin Niu(牛晓滨), and Zhiming Wang(王志明) |
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Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In2Se3 thin films on mica |
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Chin. Phys. B
2021 Vol.30 (1): 17701-
[Abstract]
(524)
[HTML 1 KB]
[PDF 2499 KB]
(119)
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108401 |
Jingxiu Yang(杨竞秀), Peng Zhang(张鹏), Jianping Wang(王建平), and Su-Huai Wei(魏苏淮)† |
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Theoretical investigation of halide perovskites for solar cell and optoelectronic applications |
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Chin. Phys. B
2020 Vol.29 (10): 108401-
[Abstract]
(695)
[HTML 1 KB]
[PDF 4740 KB]
(397)
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78502 |
Yan-Bo Guo(郭延博), Li-Qiang Zhu(竺立强) |
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Recent progress in optoelectronic neuromorphic devices |
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Chin. Phys. B
2020 Vol.29 (7): 78502-078502
[Abstract]
(469)
[HTML 0 KB]
[PDF 8472 KB]
(328)
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70703 |
Lei Yin(尹蕾), Xiaodong Pi(皮孝东), Deren Yang(杨德仁) |
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Silicon-based optoelectronic synaptic devices |
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Chin. Phys. B
2020 Vol.29 (7): 70703-070703
[Abstract]
(659)
[HTML 0 KB]
[PDF 6094 KB]
(433)
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67801 |
Weiwu Li(李伟武), Konstantin Riegel, Chuanpu Liu(刘传普), Alexey Taskin, Yoichi Ando, Zhimin Liao(廖志敏), Martin Dressel, Yuan Yan(严缘) |
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Acoustic plasmonics of Au grating/Bi2Se3 thin film/sapphirehybrid structures |
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Chin. Phys. B
2020 Vol.29 (6): 67801-067801
[Abstract]
(493)
[HTML 1 KB]
[PDF 1107 KB]
(140)
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48401 |
Wuhong Xue(薛武红), Wenjuan Ci(次文娟), Xiao-Hong Xu(许小红), Gang Liu(刘钢) |
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Optoelectronic memristor for neuromorphic computing |
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Chin. Phys. B
2020 Vol.29 (4): 48401-048401
[Abstract]
(869)
[HTML 1 KB]
[PDF 11511 KB]
(445)
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66201 |
Yi-Fang Yuan(袁亦方), Zhi-Tao Zhang(张志涛), Wei-Ke Wang(王伟科), Yong-Hui Zhou(周永惠), Xu-Liang Chen(陈绪亮), Chao An(安超), Ran-Ran Zhang(张冉冉), Ying Zhou(周颖), Chuan-Chuan Gu(顾川川), Liang Li(李亮), Xin-Jian Li(李新建), Zhao-Rong Yang(杨昭荣) |
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Pressure-induced enhancement of optoelectronic properties in PtS2 |
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Chin. Phys. B
2018 Vol.27 (6): 66201-066201
[Abstract]
(865)
[HTML 1 KB]
[PDF 964 KB]
(283)
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118102 |
Zheng Zhang(张铮), Zhuo Kang(康卓), Qingliang Liao(廖庆亮), Xiaomei Zhang(张晓梅), Yue Zhang(张跃) |
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One-dimensional ZnO nanostructure-based optoelectronics |
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Chin. Phys. B
2017 Vol.26 (11): 118102-118102
[Abstract]
(707)
[HTML 1 KB]
[PDF 4426 KB]
(502)
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117001 |
Shu-ying Lei(雷疏影), Jian Zhong(钟建), Dian-li Zhou(周殿力), Fang-yun Zhu(朱方云), Chao-xu Deng(邓朝旭) |
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Enhancement of electroluminescent properties of organic optoelectronic integrated device by doping phosphorescent dye |
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Chin. Phys. B
2017 Vol.26 (11): 117001-117001
[Abstract]
(458)
[HTML 1 KB]
[PDF 601 KB]
(208)
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36802 |
Zi-Wei Li(李梓维), Yi-Han Hu(胡义涵), Yu Li(李瑜), Zhe-Yu Fang(方哲宇) |
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Light-matter interaction of 2D materials: Physics and device applications |
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Chin. Phys. B
2017 Vol.26 (3): 36802-036802
[Abstract]
(1041)
[HTML 1 KB]
[PDF 5688 KB]
(1202)
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34202 |
Xue-Jiao Zhang(张学娇), Qing Ye(叶青), Rong-Hui Qu(瞿荣辉), Hai-wen Cai(蔡海文) |
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High-power electro-optic switch technology based on novel transparent ceramic |
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Chin. Phys. B
2016 Vol.25 (3): 34202-034202
[Abstract]
(617)
[HTML 1 KB]
[PDF 3581 KB]
(464)
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117102 |
H. A. Rahnamaye Aliabad, Battal G. Yalcin |
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Effects of IIIB transition metals on optoelectronic and magnetic properties of HoMnO3: A first principles study |
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Chin. Phys. B
2015 Vol.24 (11): 117102-117102
[Abstract]
(472)
[HTML 1 KB]
[PDF 4908 KB]
(431)
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97102 |
H. A. Rahnamaye Aliabad |
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Investigation of optoelectronic properties of pure and Co substituted α-Al2O3 by Hubbard and modified Becke-Johnson exchange potentials |
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Chin. Phys. B
2015 Vol.24 (9): 97102-097102
[Abstract]
(577)
[HTML 1 KB]
[PDF 956 KB]
(544)
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24211 |
Zhang Dong-Liang (张东亮), Cheng Bu-Wen (成步文), Xue Chun-Lai (薛春来), Zhang Xu (张旭), Cong Hui (丛慧), Liu Zhi (刘智), Zhang Guang-Ze (张广泽), Wang Qi-Ming (王启明) |
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Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser |
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Chin. Phys. B
2015 Vol.24 (2): 24211-024211
[Abstract]
(743)
[HTML 0 KB]
[PDF 359 KB]
(417)
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83302 |
Sun Qian-Qian (孙倩倩), An Qiao-Shi (安桥石), Zhang Fu-Jun (张福俊) |
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A simple encapsulation method for organic optoelectronic devices |
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Chin. Phys. B
2014 Vol.23 (8): 83302-083302
[Abstract]
(649)
[HTML 1 KB]
[PDF 443 KB]
(392)
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38506 |
Li Chong (李冲), Xue Chun-Lai (薛春来), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Li Chuan-Bo (李传波), Wang Qi-Ming (王启明) |
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Zero-bias high-responsivity high-bandwidth top-illuminated germanium p–i–n photodetectors |
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Chin. Phys. B
2014 Vol.23 (3): 38506-038506
[Abstract]
(560)
[HTML 1 KB]
[PDF 294 KB]
(644)
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124209 |
Li Ya-Ming (李亚明), Cheng Bu-Wen (成步文) |
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Efficient evanescent coupling design for GeSi electro-absorption modulator |
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Chin. Phys. B
2013 Vol.22 (12): 124209-124209
[Abstract]
(498)
[HTML 1 KB]
[PDF 402 KB]
(525)
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114212 |
Xu Hao (徐浩), Li Xian-Yao (李显尧), Xiao Xi (肖希), Li Zhi-Yong (李智勇), Yu Yu-De (俞育德), Yu Jin-Zhong (余金中) |
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High-speed and broad optical bandwidth silicon modulator |
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Chin. Phys. B
2013 Vol.22 (11): 114212-114212
[Abstract]
(661)
[HTML 1 KB]
[PDF 1655 KB]
(1265)
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98106 |
Wu Hua-Qiang (吴华强), Linghu Chang-Yang (令狐昌洋), Lü Hong-Ming (吕宏鸣), Qian He (钱鹤) |
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Graphene applications in electronic and optoelectronic devices and circuits |
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Chin. Phys. B
2013 Vol.22 (9): 98106-098106
[Abstract]
(859)
[HTML 1 KB]
[PDF 2142 KB]
(2364)
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58103 |
Xie De-Hua (谢德华), Wang Fei-Fei (王菲菲), Lü Hao (吕浩), Du Min-Yong (杜敏永), Xu Wen-Jie (徐文杰) |
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Optoelectronic characteristics of CuO nanorods |
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Chin. Phys. B
2013 Vol.22 (5): 58103-058103
[Abstract]
(560)
[HTML 1 KB]
[PDF 368 KB]
(566)
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94207 |
Wang Yu-Zhou(王宇宙), Li Ding(李丁), Li Lei(李磊),Liu Ning-Yang(刘宁炀), Liu Lei(刘磊),Cao Wen-Yu(曹文彧), Chen Wei-Hua(陈伟华), and Hu Xiao-Dong(胡晓东) |
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Intersubband transitions in Al0.82In0.18N/GaN single quantum well |
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Chin. Phys. B
2011 Vol.20 (9): 94207-094207
[Abstract]
(1426)
[HTML 0 KB]
[PDF 200 KB]
(882)
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37307 |
Jiang Wei(姜威), Gao Hong(高红), Xu Ling-Ling(徐玲玲), Ma Jia-Ning(马佳宁), Zhang E(张锷), Wei Ping(魏平), and Lin Jia-Qi(林家齐) |
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Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template |
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Chin. Phys. B
2011 Vol.20 (3): 37307-037307
[Abstract]
(1395)
[HTML 1 KB]
[PDF 241 KB]
(1032)
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18503 |
Wang Wei(王伟), Huang Bei-Ju(黄北举), Dong Zan(董赞), and Chen Hong-Da(陈弘达) |
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Multifunctional silicon-based light emitting device in standard complementary metal–oxide–semiconductor technology |
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Chin. Phys. B
2011 Vol.20 (1): 18503-018503
[Abstract]
(1754)
[HTML 0 KB]
[PDF 1499 KB]
(1051)
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3448 |
Zhang Li-Ping(张丽平), Zhang Jian-Jun(张建军), Shang Ze-Ren(尚泽仁), Hu Zeng-Xin(胡增鑫), Geng Xin-Hua(耿新华), and Zhao Ying(赵颖) |
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Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition |
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Chin. Phys. B
2008 Vol.17 (9): 3448-3452
[Abstract]
(1400)
[HTML 1 KB]
[PDF 1358 KB]
(647)
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3875 |
Wang Ding-Qu(王鼎渠), Zhou Zhao-Ying(周兆英), Zhu Rong(朱荣), and Ye Xiong-Ying(叶雄英) |
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Electrical characteristics and optoelectronic properties of metal--semiconductor--metal structure with zinc oxide nanowires across Au electrodes |
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Chin. Phys. B
2008 Vol.17 (10): 3875-3879
[Abstract]
(1344)
[HTML 0 KB]
[PDF 930 KB]
(852)
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