Abstract We report efficient zero-bias high-speed top-illuminated p–i–n photodiodes (PDs) with high responsivity fabricated with germanium (Ge) films grown directly on silicon-on-insulator (SOI) substrates. For a 15 μm-diameter device at room temperature, the dark current density was 44.1 mA/cm2 at –1 V. The responsivity at 1.55 μm was 0.30 A/W at 0 V. The saturation of the optical responsivity at 0 V bias revealed that this photodetector allows a complete photo-generated carrier collection without bias. Although the 3-dB bandwidth of the 15-μ-diameter detector was 18.8 GHz at the reverse bias of 0 V, the detector responsivity was improved by one order of magnitude compared with that reported in the literature. Moreover, the dark current of the detector was significantly reduced.
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