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Combination of density-clustering and supervised classification for event identification in single-molecule force spectroscopy data
Yongyi Yuan(袁泳怡), Jialun Liang(梁嘉伦), Chuang Tan(谭创), Xueying Yang(杨雪滢), Dongni Yang(杨东尼), and Jie Ma(马杰)
Chin. Phys. B, 2023, 32 (
10
): 108702. DOI:
10.1088/1674-1056/acf03e
Abstract
(
530
)
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Single-molecule force spectroscopy (SMFS) measurements of the dynamics of biomolecules typically require identifying massive events and states from large data sets, such as extracting rupture forces from force-extension curves (FECs) in pulling experiments and identifying states from extension-time trajectories (ETTs) in force-clamp experiments. The former is often accomplished manually and hence is time-consuming and laborious while the latter is always impeded by the presence of baseline drift. In this study, we attempt to accurately and automatically identify the events and states from SMFS experiments with a machine learning approach, which combines clustering and classification for event identification of SMFS (ACCESS). As demonstrated by analysis of a series of data sets, ACCESS can extract the rupture forces from FECs containing multiple unfolding steps and classify the rupture forces into the corresponding conformational transitions. Moreover, ACCESS successfully identifies the unfolded and folded states even though the ETTs display severe nonmonotonic baseline drift. Besides, ACCESS is straightforward in use as it requires only three easy-to-interpret parameters. As such, we anticipate that ACCESS will be a useful, easy-to-implement and high-performance tool for event and state identification across a range of single-molecule experiments.
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High responsivity photodetectors based on graphene/WSe
2
heterostructure by photogating effect
Shuping Li(李淑萍), Ting Lei(雷挺), Zhongxing Yan(严仲兴), Yan Wang(王燕), Like Zhang(张黎可), Huayao Tu(涂华垚), Wenhua Shi(时文华), and Zhongming Zeng(曾中明)
Chin. Phys. B, 2024, 33 (
1
): 018501. DOI:
10.1088/1674-1056/acfa84
Abstract
(
470
)
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Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material. However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe
2
vertical heterostructure where the WSe
2
layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe
2
, as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10
4
A/W and external quantum efficiency of 1.3×10
7
%. This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.
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Bimodal growth of Fe islands on graphene
Yi-Sheng Gu(顾翊晟), Qiao-Yan Yu(俞俏滟), Dang Liu(刘荡), Ji-Ce Sun(孙蓟策), Rui-Jun Xi(席瑞骏), Xing-Sen Chen(陈星森), Sha-Sha Xue(薛莎莎), Yi Zhang(章毅), Xian Du(杜宪), Xu-Hui Ning(宁旭辉), Hao Yang(杨浩), Dan-Dan Guan(管丹丹), Xiao-Xue Liu(刘晓雪), Liang Liu(刘亮), Yao-Yi Li(李耀义), Shi-Yong Wang(王世勇), Can-Hua Liu(刘灿华), Hao Zheng(郑浩), and Jin-Feng Jia(贾金锋)
Chin. Phys. B, 2024, 33 (
6
): 068104. DOI:
10.1088/1674-1056/ad322f
Abstract
(
356
)
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1
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Magnetic metals deposited on graphene hold the key to applications in spintronics. Here, we present the results of Fe islands grown on graphene/SiC(0001) by molecular beam epitaxy, which are investigated by scanning tunneling microscopy. The two types of islands distinguished by flat or round tops are revealed, indicating bimodal growth of Fe. The atomic structures on the top surfaces of flat islands are also clearly resolved. Our results may improve the understanding of the mechanisms of metals deposited on graphene and pave the way for future spintronic applications of Fe/graphene systems.
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Single-flux-quantum-based qubit control with tunable driving strength
Kuang Liu(刘匡), Yifan Wang(王一凡), Bo Ji(季波), Wanpeng Gao(高万鹏), Zhirong Lin(林志荣), and Zhen Wang(王镇)
Chin. Phys. B, 2023, 32 (
12
): 128501. DOI:
10.1088/1674-1056/acf5d0
Abstract
(
325
)
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0
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184
)
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Single-flux-quantum (SFQ) circuits have great potential in building cryogenic quantum-classical interfaces for scaling up superconducting quantum processors. SFQ-based quantum gates have been designed and realized. However, current control schemes are difficult to tune the driving strength to qubits, which restricts the gate length and usually induces leakage to unwanted levels. In this study, we design the scheme and corresponding pulse generator circuit to continuously adjust the driving strength by coupling SFQ pulses with variable intervals. This scheme not only provides a way to adjust the SFQ-based gate length, but also proposes the possibility to tune the driving strength envelope. Simulations show that our scheme can suppress leakage to unwanted levels and reduce the error of SFQ-based Clifford gates by more than an order of magnitude.
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Molecular dynamics simulations on the interactions between nucleic acids and a phospholipid bilayer
Yao Xu(徐耀), Shu-Wei Huang(黄舒伟), Hong-Ming Ding(丁泓铭), and Yu-Qiang Ma(马余强)
Chin. Phys. B, 2024, 33 (
2
): 028701. DOI:
10.1088/1674-1056/ad1178
Abstract
(
301
)
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6
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248
)
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Recently, lipid nanoparticles (LNPs) have been extensively investigated as non-viral carriers of nucleic acid vaccines due to their high transport efficiency, safety, and straightforward production and scalability. However, the molecular mechanism underlying the interactions between nucleic acids and phospholipid bilayers within LNPs remains elusive. In this study, we employed the all-atom molecular dynamics simulation to investigate the interactions between single-stranded nucleic acids and a phospholipid bilayer. Our findings revealed that hydrophilic bases, specifically G in single-stranded RNA (ssRNA) and single-stranded DNA (ssDNA), displayed a higher propensity to form hydrogen bonds with phospholipid head groups. Notably, ssRNA exhibited stronger binding energy than ssDNA. Furthermore, divalent ions, particularly Ca
2+
, facilitated the binding of ssRNA to phospholipids due to their higher binding energy and lower dissociation rate from phospholipids. Overall, our study provides valuable insights into the molecular mechanisms underlying nucleic acid-phospholipid interactions, with potential implications for the nucleic acids in biotherapies, particularly in the context of lipid carriers.
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SiC trench MOSFET with dual shield gate and optimized JFET layer for improved dynamic performance and safe operating area capability
Jin-Ping Zhang(张金平), Wei Chen(陈伟), Zi-Xun Chen(陈子珣), and Bo Zhang(张波)
Chin. Phys. B, 2023, 32 (
11
): 118502. DOI:
10.1088/1674-1056/acdc8d
Abstract
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292
)
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A novel silicon carbide (SiC) trench metal-oxide-semiconductor field-effect transistor (MOSFET) with a dual shield gate (DSG) and optimized junction field-effect transistor (JFET) layer (ODSG-TMOS) is proposed. The combination of the DSG and optimized JFET layer not only significantly improves the device's dynamic performance but also greatly enhances the safe operating area (SOA). Numerical analysis is carried out with Silvaco TCAD to study the performance of the proposed structure. Simulation results show that comparing with the conventional asymmetric trench MOSFET (Con-ATMOS), the specific on-resistance (
R
on, sp
) is significantly reduced at almost the same avalanche breakdown voltage (
BV
av
). Moreover, the DSG structure brings about much smaller reverse transfer capacitance (
C
rss
) and input capacitance (
C
iss
), which helps to reduce the gate-drain charge (
Q
gd
) and gate charge (
Q
g
). Therefore, the high frequency figure of merit (HFFOM) of
R
on, sp
·
Q
gd
and
R
on, sp
·
Q
g
for the proposed ODSG-TMOS are improved by 83.5% and 76.4%, respectively. The switching power loss of the proposed ODSG-TMOS is 77.0% lower than that of the Con-ATMOS. In addition, the SOA of the proposed device is also enhanced. The saturation drain current (
I
d,sat
) at a gate voltage (
V
gs
) of 15 V for the ODSG-TMOS is reduced by 17.2% owing to the JFET effect provided by the lower shield gate (SG) at a large drain voltage. With the reduced
I
d,sat
, the short-circuit withstand time is improved by 87.5% compared with the Con-ATMOS. The large-current turn-off capability is also improved, which is important for the widely used inductive load applications.
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Ferroelectricity of pristine Hf
0.5
Zr
0.5
O
2
films fabricated by atomic layer deposition
Luqiu Chen(陈璐秋), Xiaoxu Zhang(张晓旭), Guangdi Feng(冯光迪), Yifei Liu(刘逸飞), Shenglan Hao(郝胜兰), Qiuxiang Zhu(朱秋香), Xiaoyu Feng(冯晓钰), Ke Qu(屈可), Zhenzhong Yang(杨振中), Yuanshen Qi(祁原深), Yachin Ivry, Brahim Dkhil, Bobo Tian(田博博), Junhao Chu(褚君浩), and Chungang Duan(段纯刚)
Chin. Phys. B, 2023, 32 (
10
): 108102. DOI:
10.1088/1674-1056/accff3
Abstract
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287
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0
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Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics. This work demonstrates that a remanent polarization ($P_{\rm r}$) value of $> 5 $ μC/cm$^{2}$ can be obtained in as-deposited Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ (HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 ℃. The ferroelectric orthorhombic phase (o-phase) in the as-deposited HZO films is detected by scanning transmission electron microscopy (STEM). This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.
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Increasing linear flux range of SQUID amplifier using self-feedback effect
Ying-Yu Chen(陈滢宇), Chao-Qun Wang(王超群), Yuan-Xing Xu(徐元星), Yue Zhao(赵越), Li-Liang Ying(应利良), Hang-Xing Xie(谢颃星), Bo Gao(高波), and Zhen Wang(王镇)
Chin. Phys. B, 2023, 32 (
11
): 118501. DOI:
10.1088/1674-1056/acd8ac
Abstract
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277
)
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Superconducting quantum interference devices (SQUIDs) are low-noise amplifiers that are essential for the readouts of translation edge sensors (TESs). The linear flux range is an important parameter for SQUID amplifiers, especially those controlled by high-bandwidth digital flux-locked-loop circuits. A large linear flux range conduces to accurately measuring the input signal and also increasing the multiplexing factor in the time-division multiplexed (TDM) readout scheme of the TES array. In this work, we report that the linear flux range of an SQUID can be improved by using self-feedback effect. When the SQUID loop is designed to be asymmetric, a voltage-biased SQUID shows an asymmetric current-flux (
I-Φ
) response curve. The linear flux range is improved along the
I-Φ
curve with a shallow slope. The experimental results accord well with the numerical simulations. The asymmetric SQUID will be able to serve as a building block in the development of the TDM readout systems for large TES arrays.
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High-resolution imaging of magnetic fields of banknote anti-counterfeiting strip using fiber diamond probe
Xu-Tong Zhao(赵旭彤), Fei-Yue He(何飞越), Ya-Wen Xue(薛雅文), Wen-Hao Ma(马文豪), Xiao-Han Yin(殷筱晗), Sheng-Kai Xia(夏圣开), Ming-Jing Zeng(曾明菁), and Guan-Xiang Du(杜关祥)
Chin. Phys. B, 2024, 33 (
4
): 048502. DOI:
10.1088/1674-1056/ad1b44
Abstract
(
271
)
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Counterfeiting of modern banknotes poses a significant challenge, prompting the use of various preventive measures. One such measure is the magnetic anti-counterfeiting strip. However, due to its inherent weak magnetic properties, visualizing its magnetic distribution has been a longstanding challenge. In this work, we introduce an innovative method by using a fiber optic diamond probe, a highly sensitive quantum sensor designed specifically for detecting extremely weak magnetic fields. We employ this probe to achieve high-resolution imaging of the magnetic fields associated with the RMB 50 denomination anti-counterfeiting strip. Additionally, we conduct computer simulations by using COMSOL Multiphysics software to deduce the potential geometric characteristics and material composition of the magnetic region within the anti-counterfeiting strip. The findings and method presented in this study hold broader significance, extending the RMB 50 denomination to various denominations of the Chinese currency and other items that employ magnetic anti-counterfeiting strips. These advances have the potential to significantly improve and promote security measures in order to prevent the banknotes from being counterfeited.
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SLGC: Identifying influential nodes in complex networks from the perspectives of self-centrality, local centrality, and global centrality
Da Ai(艾达), Xin-Long Liu(刘鑫龙), Wen-Zhe Kang(康文哲), Lin-Na Li(李琳娜), Shao-Qing Lü(吕少卿), and Ying Liu(刘颖)
Chin. Phys. B, 2023, 32 (
11
): 118902. DOI:
10.1088/1674-1056/aceee8
Abstract
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268
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Identifying influential nodes in complex networks and ranking their importance plays an important role in many fields such as public opinion analysis, marketing, epidemic prevention and control. To solve the issue of the existing node centrality measure only considering the specific statistical feature of a single dimension, a SLGC model is proposed that combines a node's self-influence, its local neighborhood influence, and global influence to identify influential nodes in the network. The exponential function of e is introduced to measure the node's self-influence; in the local neighborhood, the node's one-hop neighboring nodes and two-hop neighboring nodes are considered, while the information entropy is introduced to measure the node's local influence; the topological position of the node in the network and the shortest path between nodes are considered to measure the node's global influence. To demonstrate the effectiveness of the proposed model, extensive comparison experiments are conducted with eight existing node centrality measures on six real network data sets using node differentiation ability experiments, susceptible-infected-recovered (SIR) model and network efficiency as evaluation criteria. The experimental results show that the method can identify influential nodes in complex networks more accurately.
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Influence of viscous force on the dynamic process of micro-sphere in optical tweezers
Jing Liu(刘静), Xingyu Wu(吴星宇), Yimin Feng(冯怡敏), Mian Zheng(郑冕), and Zhiyuan Li(李志远)
Chin. Phys. B, 2023, 32 (
10
): 108704. DOI:
10.1088/1674-1056/acddd1
Abstract
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263
)
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With the advantages of noncontact, high accuracy, and high flexibility, optical tweezers hold huge potential for micro-manipulation and force measurement. However, the majority of previous research focused on the state of the motion of particles in the optical trap, but paid little attention to the early dynamic process between the initial state of the particles and the optical trap. Note that the viscous forces can greatly affect the motion of micro-spheres. In this paper, based on the equations of Newtonian mechanics, we investigate the dynamics of laser-trapped micro-spheres in the surrounding environment with different viscosity coefficients. Through the calculations, over time the particle trajectory clearly reveals the subtle details of the optical capture process, including acceleration, deceleration, turning, and reciprocating oscillation. The time to equilibrium mainly depends on the corresponding damping coefficient of the surrounding environment and the oscillation frequency of the optical tweezers. These studies are essential for understanding various mechanisms to engineer the mechanical motion behavior of molecules or microparticles in liquid or air.
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Molecular dynamics study of thermal conductivities of cubic diamond, lonsdaleite, and nanotwinned diamond via machine-learned potential
Jia-Hao Xiong(熊佳豪), Zi-Jun Qi(戚梓俊), Kang Liang(梁康), Xiang Sun(孙祥), Zhan-Peng Sun(孙展鹏), Qi-Jun Wang(汪启军), Li-Wei Chen(陈黎玮), Gai Wu(吴改), and Wei Shen(沈威)
Chin. Phys. B, 2023, 32 (
12
): 128101. DOI:
10.1088/1674-1056/ace4b4
Abstract
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262
)
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Diamond is a wide-bandgap semiconductor with a variety of crystal configurations, and has the potential applications in the field of high-frequency, radiation-hardened, and high-power devices. There are several important polytypes of diamonds, such as cubic diamond, lonsdaleite, and nanotwinned diamond (NTD). The thermal conductivities of semiconductors in high-power devices at different temperatures should be calculated. However, there has been no reports about thermal conductivities of cubic diamond and its polytypes both efficiently and accurately based on molecular dynamics (MD). Here, using interatomic potential of neural networks can provide obvious advantages. For example, comparing with the use of density functional theory (DFT), the calculation time is reduced, while maintaining high accuracy in predicting the thermal conductivities of the above-mentioned three diamond polytypes. Based on the neuroevolution potential (NEP), the thermal conductivities of cubic diamond, lonsdaleite, and NTD at 300 K are respectively 2507.3 W·m
-1
·K
-1
, 1557.2 W·m
-1
·K
-1
, and 985.6 W·m
-1
·K
-1
, which are higher than the calculation results based on Tersoff-1989 potential (1508 W·m
-1
·K
-1
, 1178 W·m
-1
·K
-1
, and 794 W·m
-1
·K
-1
, respectively). The thermal conductivities of cubic diamond and lonsdaleite, obtained by using the NEP, are closer to the experimental data or DFT data than those from Tersoff-potential. The molecular dynamics simulations are performed by using NEP to calculate the phonon dispersions, in order to explain the possible reasons for discrepancies among the cubic diamond, lonsdaleite, and NTD. In this work, we propose a scheme to predict the thermal conductivity of cubic diamond, lonsdaleite, and NTD precisely and efficiently, and explain the differences in thermal conductivity among cubic diamond, lonsdaleite, and NTD.
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Identifying influential spreaders in complex networks based on density entropy and community structure
Zhan Su(苏湛), Lei Chen(陈磊), Jun Ai(艾均), Yu-Yu Zheng(郑雨语), and Na Bie(别娜)
Chin. Phys. B, 2024, 33 (
5
): 058901. DOI:
10.1088/1674-1056/ad20d6
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257
)
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In recent years, exploring the relationship between community structure and node centrality in complex networks has gained significant attention from researchers, given its fundamental theoretical significance and practical implications. To address the impact of network communities on target nodes and effectively identify highly influential nodes with strong propagation capabilities, this paper proposes a novel influential spreaders identification algorithm based on density entropy and community structure (DECS). The proposed method initially integrates a community detection algorithm to obtain the community partition results of the networks. It then comprehensively considers the internal and external density entropies and degree centrality of the target node to evaluate its influence. Experimental validation is conducted on eight networks of varying sizes through susceptible-infected-recovered (SIR) propagation experiments and network static attack experiments. The experimental results demonstrate that the proposed method outperforms five other node centrality methods under the same comparative conditions, particularly in terms of information spreading capability, thereby enhancing the accurate identification of critical nodes in networks.
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Investigation of Ga
2
O
3
/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation
Dun-Zhou Xu(许敦洲), Peng Jin(金鹏), Peng-Fei Xu(徐鹏飞), Meng-Yang Feng(冯梦阳), Ju Wu(吴巨), and Zhan-Guo Wang(王占国)
Chin. Phys. B, 2023, 32 (
10
): 108504. DOI:
10.1088/1674-1056/acc44d
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(
256
)
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A Ga
2
O
3
/diamond separate absorption and multiplication avalanche photodiode (SAM-APD) with mesa structure has been proposed and simulated. The simulation is based on an optimized Ga
2
O
3
/diamond heterostructure TCAD physical model, which is revised by repeated comparison with the experimental data from the literature. Since both Ga
2
O
3
and diamond are ultra-wide bandgap semiconductor materials, the Ga
2
O
3
/diamond SAM-APD shows good solar-blind detection ability, and the corresponding cutoff wavelength is about 263 nm. The doping distribution and the electric field distribution of the SAM-APD are discussed, and the simulation results show that the gain of the designed device can reach 5×10
4
and the peak responsivity can reach a value as high as 78 A/W.
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Simulation of crowd evacuation under attack considering emotion spreading
Yang Wang(王杨), Ning Ding(丁宁), Dapeng Dong(董大鹏), and Yu Zhu(朱萸)
Chin. Phys. B, 2024, 33 (
12
): 128901. DOI:
10.1088/1674-1056/ad84c7
Abstract
(
248
)
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In recent years, attacks against crowded places such as campuses and theaters have had a frequent and negative impact on the security and stability of society. In such an event, the crowd will be subjected to high psychological stress and their emotions will rapidly spread to others. This paper establishes the attack-escape evacuation simulation model (AEES-SFM), based on the social force model, to consider emotion spreading under attack. In this model, (1) the attack-escape driving force is considered for the interaction between an attacker and evacuees and (2) emotion spreading among the evacuees is considered to modify the value of the psychological force. To validate the simulation, several experiments were carried out at a university in China. Comparing the simulation and experimental results, it is found that the simulation results are similar to the experimental results when considering emotion spreading. Therefore, the AEES-SFM is proved to be effective. By comparing the results of the evacuation simulation without emotion spreading, the emotion spreading model reduces the evacuation time and the number of casualties by about 30%, which is closer to the real experimental results. The results are still applicable in the case of a 40-person evacuation. This paper provides theoretical support and practical guidance for campus response to violent attacks.
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Purification of copper foils driven by single crystallization
Jin-Zong Kou(寇金宗), Meng-Ze Zhao(赵孟泽), Xing-Guang Li(李兴光), Meng-Lin He(何梦林), Fang-You Yang(杨方友), Ke-Hai Liu(刘科海), Qing-Qiu Cheng(成庆秋), Yun-Long Ren(任云龙), Can Liu(刘灿), Ying Fu(付莹), Mu-Hong Wu(吴慕鸿), Kai-Hui Liu(刘开辉), and En-Ge Wang(王恩哥)
Chin. Phys. B, 2024, 33 (
2
): 028101. DOI:
10.1088/1674-1056/ad0ec5
Abstract
(
246
)
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)
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High-purity copper (Cu) with excellent thermal and electrical conductivity, is crucial in modern technological applications, including heat exchangers, integrated circuits, and superconducting magnets. The current purification process is mainly based on the zone/electrolytic refining or anion exchange, however, which excessively relies on specific integrated equipment with ultra-high vacuum or chemical solution environment, and is also bothered by external contaminants and energy consumption. Here we report a simple approach to purify the Cu foils from 99.9% (3N) to 99.99% (4N) by a temperature-gradient thermal annealing technique, accompanied by the kinetic evolution of single crystallization of Cu. The success of purification mainly relies on (i) the segregation of elements with low effective distribution coefficient driven by grain-boundary movements and (ii) the high-temperature evaporation of elements with high saturated vapor pressure. The purified Cu foils display higher flexibility (elongation of 70%) and electrical conductivity (104% IACS) than that of the original commercial rolled Cu foils (elongation of 10%, electrical conductivity of ~ 100% IACS). Our results provide an effective strategy to optimize the as-produced metal medium, and therefore will facilitate the potential applications of Cu foils in precision electronic products and high-frequency printed circuit boards.
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Investigation of degradation and recovery characteristics of NBTI in 28-nm high-
k
metal gate process
Wei-Tai Gong(巩伟泰), Yan Li(李闫), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), and Xiao-Jin Li(李小进)
Chin. Phys. B, 2023, 32 (
12
): 128502. DOI:
10.1088/1674-1056/ace034
Abstract
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246
)
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Degradation induced by the negative bias temperature instability (NBTI) can be attributed to three mutually uncoupled physical mechanisms, i.e., the generation of interface traps (Δ
V
IT
), hole trapping in pre-existing gate oxide defects (Δ
V
HT
), and the generation of gate oxide defects (Δ
V
OT
). In this work, the characteristic of NBTI for p-type MOSFET fabricated by using a 28-nm high-
k
metal gate (HKMG) process is thoroughly studied. The experimental results show that the degradation is enhanced at a larger stress bias and higher temperature. The effects of the three underlying subcomponents are evaluated by using the comprehensive models. It is found that the generation of interface traps dominates the NBTI degradation during long-time NBTI stress. Moreover, the NBTI parameters of the power-law time exponent and temperature activation energy as well as the gate oxide field acceleration are extracted. The dependence of operating lifetime on stress bias and temperature is also discussed. It is observed that NBTI lifetime significantly decreases as the stress increases. Furthermore, the decrease of charges related to interface traps and hole detrapping in pre-existing gate oxide defects are used to explain the recovery mechanism after stress.
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W-doped In
2
O
3
nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity
Yang Yang(杨洋), Chuanyu Fu(傅传玉), Shuo Ke(柯硕), Hangyuan Cui(崔航源), Xiao Fang(方晓), Changjin Wan(万昌锦), and Qing Wan(万青)
Chin. Phys. B, 2023, 32 (
11
): 118101. DOI:
10.1088/1674-1056/acdeda
Abstract
(
243
)
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Neuromorphic devices that mimic the information processing function of biological synapses and neurons have attracted considerable attention due to their potential applications in brain-like perception and computing. In this paper, neuromorphic transistors with W-doped In
2
O
3
nanofibers as the channel layers are fabricated and optoelectronic synergistic synaptic plasticity is also investigated. Such nanofiber transistors can be used to emulate some biological synaptic functions, including excitatory postsynaptic current (EPSC), long-term potentiation (LTP), and depression (LTD). Moreover, the synaptic plasticity of the nanofiber transistor can be synergistically modulated by light pulse and electrical pulse. At last, pulsed light learning and pulsed electrical forgetting behaviors were emulated in 5× 5 nanofiber device array. Our results provide new insights into the development of nanofiber optoelectronic neuromorphic devices with synergistic synaptic plasticity.
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Diamond growth in a high temperature and high pressure Fe-Ni-C-Si system: Effect of synthesis pressure
Yang Liu(刘杨), Zhiwen Wang(王志文), Bowei Li(李博维), Hongyu Zhao(赵洪宇), Shengxue Wang(王胜学), Liangchao Chen(陈良超), Hongan Ma(马红安), and Xiaopeng Jia(贾晓鹏)
Chin. Phys. B, 2023, 32 (
12
): 128102. DOI:
10.1088/1674-1056/acf03d
Abstract
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243
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Pressure is one of the necessary conditions for diamond growth. Exploring the influence of pressure on growth changes in silicon-doped diamonds is of great value for the production of high-quality diamonds. This work reports the morphology, impurity content and crystal quality characteristics of silicon-doped diamond crystals synthesized under different pressures. Fourier transform infrared spectroscopy shows that with the increase of pressure, the nitrogen content in the C- center inside the diamond crystal decreases. X-ray photoelectron spectroscopy test results show the presence of silicon in the diamond crystals synthesized by adding silicon powder. Raman spectroscopy data shows that the increase in pressure in the Fe-Ni-C-Si system shifts the Raman peak of diamonds from 1331.18 cm
-1
to 1331.25 cm
-1
, resulting in a decrease in internal stress in the crystal. The half-peak width decreased from 5.41 cm
-1
to 5.26 cm
-1
, and the crystallinity of the silicon-doped diamond crystals improved, resulting in improved quality. This work provides valuable data that can provide a reference for the synthesis of high-quality silicon-doped diamonds.
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Effect of external magnetic field on the instability of THz plasma waves in nanoscale graphene field-effect transistors
Liping Zhang(张丽萍), Zongyao Sun(孙宗耀), Jiani Li(李佳妮), and Junyan Su(苏俊燕)
Chin. Phys. B, 2024, 33 (
4
): 048102. DOI:
10.1088/1674-1056/ad1e66
Abstract
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240
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The instability of plasma waves in the channel of field-effect transistors will cause the electromagnetic waves with THz frequency. Based on a self-consistent quantum hydrodynamic model, the instability of THz plasmas waves in the channel of graphene field-effect transistors has been investigated with external magnetic field and quantum effects. We analyzed the influence of weak magnetic fields, quantum effects, device size, and temperature on the instability of plasma waves under asymmetric boundary conditions numerically. The results show that the magnetic fields, quantum effects, and the thickness of the dielectric layer between the gate and the channel can increase the radiation frequency. Additionally, we observed that increase in temperature leads to a decrease in both oscillation frequency and instability increment. The numerical results and accompanying images obtained from our simulations provide support for the above conclusions.
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