W-doped In2O3 nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

doi:10.1088/1674-1056/acdeda

Abstract Neuromorphic devices that mimic the information processing function of biological synapses and neurons have attracted considerable attention due to their potential applications in brain-like perception and computing. In this paper, neuromorphic transistors with W-doped In₂O₃ nanofibers as the channel layers are fabricated and optoelectronic synergistic synaptic plasticity is also investigated. Such nanofiber transistors can be used to emulate some biological synaptic functions, including excitatory postsynaptic current (EPSC), long-term potentiation (LTP), and depression (LTD). Moreover, the synaptic plasticity of the nanofiber transistor can be synergistically modulated by light pulse and electrical pulse. At last, pulsed light learning and pulsed electrical forgetting behaviors were emulated in 5× 5 nanofiber device array. Our results provide new insights into the development of nanofiber optoelectronic neuromorphic devices with synergistic synaptic plasticity.

Keywords: W-doped In₂O₃ nanofibers neuromorphic transistors optoelectronic synaptic plasticity

Received: 27 April 2023
Revised: 02 June 2023
Accepted manuscript online: 16 June 2023

PACS:	81.05.Gc	(Amorphous semiconductors)
	85.30.Tv	(Field effect devices)
	87.19.lg	(Synapses: chemical and electrical (gap junctions))

Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1200051 and 2019YFB2205400) and the National Natural Science Foundation of China (Grant Nos. 62174082 and 62074075).

Corresponding Authors: Changjin Wan, Qing Wan
E-mail: cjwan@nju.edu.cn;wanqing@nju.edu.cn

Cite this article:

Yang Yang(杨洋), Chuanyu Fu(傅传玉), Shuo Ke(柯硕), Hangyuan Cui(崔航源), Xiao Fang(方晓), Changjin Wan(万昌锦), and Qing Wan(万青) W-doped In₂O₃ nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity 2023 Chin. Phys. B 32 118101

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[1]	Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor Rui Liu(刘锐), Yongli He(何勇礼), Shanshan Jiang(姜珊珊), Li Zhu(朱力), Chunsheng Chen(陈春生), Ying Zhu(祝影), and Qing Wan(万青). Chin. Phys. B, 2021, 30(5): 058102.

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W-doped In2O3 nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

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W-doped In₂O₃ nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity