CMOS compatibility and excellent resistive switching of tantalum oxide-based resistive switching memory

doi:10.1088/1674-1056/adcc86

Abstract A CMOS compatible RRAM device with TaN/Ta/TaO$_{x}$/TaN structure was proposed for nonvolatile memory applications. Excellent resistive switching characteristics, including low operation voltages ($< 1$ V), low operation current (< 100 μA), good programming/erasing endurance ($> 10^{6}$ cycles), satisfactory uniformity, and reliable data retention, have been demonstrated. Furthermore, all of the elements in the fabricated TaN/Ta/TaO$_{x}$/TaN devices are highly compatible with modern CMOS manufacturing process, showing promising application in the next generation of nonvolatile memory.

Keywords: resistive switching tantalum oxide CMOS compatibility

Received: 12 February 2025
Revised: 07 March 2025
Accepted manuscript online: 15 April 2025

PACS:	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	73.40.Rw	(Metal-insulator-metal structures)
	61.72.jd	(Vacancies)
	68.60.-p	(Physical properties of thin films, nonelectronic)

Fund: Project supported by the Key Research and Development Program of Gansu Province - Industrial Project (Grant No. 25YFGA005).

Corresponding Authors: Yingtao Li
E-mail: ytli@lzu.edu.cn

Cite this article:

Liping Fu(傅丽萍), Gaoyuan Pan(潘高远), Rui Hao(郝瑞), Xiaolong Fan(范小龙), and Yingtao Li(李颖弢) CMOS compatibility and excellent resistive switching of tantalum oxide-based resistive switching memory 2025 Chin. Phys. B 34 077201

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CMOS compatibility and excellent resistive switching of tantalum oxide-based resistive switching memory

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