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Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device |
| Jin-Long Jiao(焦金龙)1, Qiu-Hong Gan(甘秋宏)1, Shi Cheng(程实)1, Ye Liao(廖晔)1, Shao-Ying Ke(柯少颖)2, Wei Huang(黄巍)1,†, Jian-Yuan Wang(汪建元)1, Cheng Li(李成)1, and Song-Yan Chen(陈松岩)1 |
1 Department of Physics and Jiujiang Research Institute, Xiamen University, Xiamen 361005, China;
2 College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, China |
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Abstract The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current. In the present work, the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO2/Pt RRAM device. The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism, which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface.
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Received: 21 January 2021
Revised: 16 March 2021
Accepted manuscript online: 30 March 2021
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PACS:
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87.15.La
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(Mechanical properties)
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79.60.Dp
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(Adsorbed layers and thin films)
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81.05.-t
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(Specific materials: fabrication, treatment, testing, and analysis)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 62004087, 61474081, and 61534005), the Natural Science Foundation of Fujian Province, China (Grant No. 2020J01815), the Natural Science Foundation of Zhangzhou, China (Grant No. ZZ2020J32), and the Natural Science Foundation of Jiangxi Province, China (Grant No. 20192ACBL20048). |
Corresponding Authors:
Wei Huang
E-mail: weihuang@xmu.edu.cn
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Cite this article:
Jin-Long Jiao(焦金龙), Qiu-Hong Gan(甘秋宏), Shi Cheng(程实), Ye Liao(廖晔), Shao-Ying Ke(柯少颖), Wei Huang(黄巍), Jian-Yuan Wang(汪建元), Cheng Li(李成), and Song-Yan Chen(陈松岩) Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device 2021 Chin. Phys. B 30 118701
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