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Chin. Phys. B, 2021, Vol. 30(4): 047302    DOI: 10.1088/1674-1056/abc67a

Flexible and degradable resistive switching memory fabricated with sodium alginate

Zhuang-Zhuang Li(李壮壮)1, Zi-Yang Yan(严梓洋)1, Jia-Qi Xu(许嘉琪)1, Xiao-Han Zhang(张晓晗)1, Jing-Bo Fan(凡井波)1, Ya Lin(林亚)1,†, and Zhong-Qiang Wang(王中强)1,2,‡
1 Department of Physics, Northeast Normal University, Changchun 130024, China; 2 National Demonstration Center for Experimental Physics Education, Northeast Normal University, Changchun 130024, China
Abstract  Transient electronics has attracted interest as an emerging technology to solve electronic-waste problem, due to its physically vanishing ability in solution. Here in this work, we demonstrate a flexible and degradable transient resistive switching (RS) memory device with simple structure of Cu/sodium alginate (SA)/ITO. The device presents excellent RS characteristics as well as high flexibility, including low operating voltage (<1.5 V) and multilevel RS behavior. No performance degradation occurs after bending the device 50 times. Moreover, our device can be absolutely dissolved in deionized water. The proposed SA-based transient memory device has great potential for the development of green and security memory devices.
Keywords:  resistive switching memory      sodium alginate      multilevel resistive switching      transient electronics  
Received:  09 October 2020      Revised:  27 October 2020      Accepted manuscript online:  31 October 2020
PACS:  73.40.Sx (Metal-semiconductor-metal structures)  
  77.22.Jp (Dielectric breakdown and space-charge effects)  
  81.07.-b (Nanoscale materials and structures: fabrication and characterization)  
Fund: Project supported by the Fund from the Ministry of Science and Technology of China (Grant No. 2018YFE0118300), the National Natural Science Foundation of China (Grant Nos. 11974072, 51902048, 61774031, and 61574031), the "111" Project, China (Grant No. B13013), the China Postdoctoral Science Foundation, China (Grant No. 2019M661185), the Fundamental Research Funds for the Central Universities, China (Grant No. 2412019QD015), and Science Fund from the Jilin Province, China (Grant No. JJKH20201163KJ).
Corresponding Authors:  Corresponding author. E-mail: Corresponding author. E-mail:   

Cite this article: 

Zhuang-Zhuang Li(李壮壮), Zi-Yang Yan(严梓洋), Jia-Qi Xu(许嘉琪), Xiao-Han Zhang(张晓晗), Jing-Bo Fan(凡井波), Ya Lin(林亚), and Zhong-Qiang Wang(王中强) Flexible and degradable resistive switching memory fabricated with sodium alginate 2021 Chin. Phys. B 30 047302

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