Lewis acid-doped transition metal dichalcogenides for ultraviolet-visible photodetectors

doi:10.1088/1674-1056/ad597f

Abstract Ultraviolet photodetectors (UV PDs) are widely used in civilian, scientific, and military fields due to their high sensitivity and low false alarm rates. We present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides (TMDs), which can effectively be used to extend the optical response range. The p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl$_{4}$ as a light absorption layer on the surface of WS$_{2}$, significantly enhancing its UV photodetection performance. Under 365 nm laser irradiation, WS$_{2}$ PDs exhibit response speed of 24 ms/20 ms, responsivity of 660 mA/W, detectivity of $3.3\times 10^{11}$ Jones, and external quantum efficiency of 226%. Moreover, we successfully apply this doping method to other TMDs materials (such as MoS$_{2}$, MoSe$_{2}$, and WSe$_{2})$ and fabricate WS$_{2}$ lateral p-n heterojunction PDs.

Keywords: two-dimensional (2D) materials p-type doping transition metal dichalcogenides photodetectors

Received: 17 April 2024
Revised: 08 June 2024
Accepted manuscript online: 19 June 2024

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)
	85.30.Tv	(Field effect devices)

Fund: This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 12025503, U23B2072, 12074293, and 12275198) and the Fundamental Research Funds for the Center Universities (Grant Nos. 2042024kf0001 and 2042023kf0196).

Corresponding Authors: Wenqing Li, Xiangheng Xiao
E-mail: wenqing_li@whu.edu.cn;xxh@whu.edu.cn

Cite this article:

Heng Yang(杨恒), Mingjun Ma(马明军), Yongfeng Pei(裴永峰), Yufan Kang(康雨凡), Jialu Yan(延嘉璐), Dong He(贺栋), Changzhong Jiang(蒋昌忠), Wenqing Li(李文庆), and Xiangheng Xiao(肖湘衡) Lewis acid-doped transition metal dichalcogenides for ultraviolet-visible photodetectors 2024 Chin. Phys. B 33 098501

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Lewis acid-doped transition metal dichalcogenides for ultraviolet-visible photodetectors

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