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Epitaxial growth of trilayer graphene moiré superlattice |
| Yalong Yuan(袁亚龙)1,2, Yanbang Chu(褚衍邦)1,2, Cheng Hu(胡成)3,4, Jinpeng Tian(田金朋)1,2, Le Liu(刘乐)1,2, Fanfan Wu(吴帆帆)1,2, Yiru Ji(季怡汝)1,2, Jiaojiao Zhao(赵交交)1,2, Zhiheng Huang(黄智恒)1,2, Xiaozhou Zan(昝晓洲)1,2, Luojun Du(杜罗军)1,2, Kenji Watanabe5, Takashi Taniguchi6, Dongxia Shi(时东霞)1,2,3, Zhiwen Shi(史志文)3,4, Wei Yang(杨威)1,2,7,‡, and Guangyu Zhang(张广宇)1,2,7,† |
1 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences(CAS), Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;
4 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China;
5 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan;
6 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan;
7 Songshan Lake Materials Laboratory, Dongguan 523808, China |
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Abstract The graphene-based moiré superlattice has been demonstrated as an exciting system for investigating strong correlation phenomenon. However, the fabrication of such moiré superlattice mainly relies on transfer technology. Here, we report the epitaxial growth of trilayer graphene (TLG) moiré superlattice on hexagonal boron nitride (hBN) by a remote plasma-enhanced chemical vapor deposition method. The as-grown TLG/hBN shows a uniform moiré pattern with a period of ～ 15 nm by atomic force microscopy (AFM) imaging, which agrees with the lattice mismatch between graphene and hBN. By fabricating the device with both top and bottom gates, we observed a gate-tunable bandgap at charge neutral point (CNP) and displacement field tunable satellite resistance peaks at half and full fillings. The resistance peak at half-filling indicates a strong electron-electron correlation in our grown TLG/hBN superlattice. In addition, we observed quantum Hall states at Landau level filling factors ν = 6, 10, 14, ..., indicating that our grown trilayer graphene has the ABC stacking order. Our work suggests that epitaxy provides an easy way to fabricate stable and reproducible two-dimensional strongly correlated electronic materials.
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Received: 23 February 2023
Revised: 12 April 2023
Accepted manuscript online: 18 April 2023
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PACS:
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73.21.Cd
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(Superlattices)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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72.80.Vp
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(Electronic transport in graphene)
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73.50.-h
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(Electronic transport phenomena in thin films)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2020YFA0309600), the National Natural Science Foundation of China (Grant Nos. 61888102, 11834017, and 12074413), the Strategic Priority Research Program of CAS (Grant Nos. XDB30000000 and XDB33000000), and the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0101340001). K. W. and T. T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan (Grant No. JPMXP0112101001), JSPS KAKENHI (Grant Nos. 19H05790, 20H00354, and 21H05233), and A3 Foresight by JSPS. |
Corresponding Authors:
Guangyu Zhang, Wei Yang
E-mail: gyzhang@iphy.ac.cn;wei.yang@iphy.ac.cn
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Cite this article:
Yalong Yuan(袁亚龙), Yanbang Chu(褚衍邦), Cheng Hu(胡成), Jinpeng Tian(田金朋), Le Liu(刘乐), Fanfan Wu(吴帆帆), Yiru Ji(季怡汝), Jiaojiao Zhao(赵交交), Zhiheng Huang(黄智恒), Xiaozhou Zan(昝晓洲), Luojun Du(杜罗军), Kenji Watanabe, Takashi Taniguchi, Dongxia Shi(时东霞), Zhiwen Shi(史志文), Wei Yang(杨威), and Guangyu Zhang(张广宇) Epitaxial growth of trilayer graphene moiré superlattice 2023 Chin. Phys. B 32 077304
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