| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of preparation parameters on growth and properties of β-Ga2O3 film |
| Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜)†, Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺) |
| College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China |
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Abstract The Ga$_{2}$O$_{3}$ films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters (such as argon-oxygen flow ratio, sputtering power, sputtering time and annealing temperature) on the growth and properties ($e.g.$, surface morphology, crystal structure, optical and electrical properties of the films) are studied by x-ray diffractometer (XRD), scanning electron microscope (SEM), and ultraviolet-visible spectrophotometer (UV-Vis). The results show that the thickness, crystallization quality and surface roughness of the $\beta $-Ga$_{2}$O$_{3}$ film are influenced by those parameters. All $\beta $-Ga$_{2}$O$_{3 }$films show good optical properties. Moreover, the value of bandgap increases with the enlarge of the percentage of oxygen increasing, and decreases with the increase of sputtering power and annealing temperature, indicating that the bandgap is related to the quality of the film and affected by the number of oxygen vacancy defects. The $I$-$V$ curves show that the Ohmic behavior between metal and $\beta $-Ga$_{2}$O$_{3}$ films is obtained at 900 ${^\circ}$C. Those results will be helpful for the further research of $\beta $-Ga$_{2}$O$_{3}$ photoelectric semiconductor.
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Received: 13 February 2022
Revised: 23 May 2022
Accepted manuscript online: 24 May 2022
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PACS:
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73.20.At
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(Surface states, band structure, electron density of states)
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81.15.Cd
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(Deposition by sputtering)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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| Fund: Project supported by the Science and Technology Major Project of Shanxi Province, China (Grant No. 20181102013), the "1331 Project" Engineering Research Center of Shanxi Province, China (Grant No. PT201801), and the Natural Science Foundation of Shanxi Province, China (Grant No. 201801D221131). |
Corresponding Authors:
Yong-Sheng Wang
E-mail: wangyongsheng@tyut.edu.cn
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Cite this article:
Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺) Effects of preparation parameters on growth and properties of β-Ga2O3 film 2023 Chin. Phys. B 32 017301
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