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Chin. Phys. B, 2022, Vol. 31(7): 077302    DOI: 10.1088/1674-1056/ac5613

Valley-dependent transport in strain engineering graphene heterojunctions

Fei Wan(万飞)1, X R Wang(王新茹)1, L H Liao(廖烈鸿)1, J Y Zhang(张嘉颜)1, M N Chen(陈梦南)1, G H Zhou(周光辉)2, Z B Siu(萧卓彬)3, Mansoor B. A. Jalil3, and Yuan Li(李源)1,†
1 Department of Physics, Hangzhou Dianzi University, Hangzhou 310018, China;
2 Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation(Ministry of Education), Hunan Normal University, Changsha 410081, China;
3 Computational Nanoelectronics and Nano-device Laboratory, Electrical and Computer Engineering Department, National University of Singapore, Singapore 117576, Singapore
Abstract  We study the effect of strain on band structure and valley-dependent transport properties of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing strain and on-site energies. In the presence of strain, the values of transmission can be effectively adjusted by changing the strengths of the strain, while the transport angle basically keeps unchanged. When an extra on-site energy is simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the transport angles of two valleys can be significantly changed. Therefore, one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies, which can be exploited for graphene-based valleytronics devices.
Keywords:  strain engineering      valley-dependent separation      graphene      on-site energy  
Received:  27 October 2021      Revised:  28 January 2022      Accepted manuscript online:  17 February 2022
PACS:  73.63.-b (Electronic transport in nanoscale materials and structures)  
Fund: Project supported by National Natural Science Foundation of China (Grant No. 11574067).
Corresponding Authors:  Yuan Li     E-mail:

Cite this article: 

Fei Wan(万飞), X R Wang(王新茹), L H Liao(廖烈鸿), J Y Zhang(张嘉颜),M N Chen(陈梦南), G H Zhou(周光辉), Z B Siu(萧卓彬), Mansoor B. A. Jalil, and Yuan Li(李源) Valley-dependent transport in strain engineering graphene heterojunctions 2022 Chin. Phys. B 31 077302

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