| CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES |
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Glass formation and physical properties of Sb 2S 3-CuI chalcogenide system |
| Qilin Ye(叶旗林)1,2, Dan Chen(陈旦)1,2, and Changgui Lin(林常规)1,2,† |
| 1 Laboratory of IR Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China; 2 Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo University, Ningbo 315211, China |
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Abstract Novel chalcogenide glasses of pseudo-binary (100-x)Sb2S3-xCuI systems were synthesized by traditional melt-quenching method. The glass-forming region of Sb2S3-CuI system was determined ranging from x=30 mol% to 40 mol%. CuI acts as a non-bridging modifier to form appropriate amount of [SbSI] structural units for improving the glass-forming ability of Sb2S3. Particularly, as-prepared glassy sample is able to transmit light beyond 14 μm, which is the wider transparency region than most sulfide glasses. Their physical properties, including Vickers hardness (H v), density (ρ ), and ionic conductivity (σ ) were characterized and analyzed with the compositional-dependent Raman spectra. These experimental results would provide useful knowledge for the development of novel multi-spectral optical materials and glassy electrolytes.
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Received: 06 July 2020
Revised: 12 August 2020
Accepted manuscript online: 14 October 2020
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PACS:
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81.05.Kf
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(Glasses (including metallic glasses))
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74.70.Xa
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(Pnictides and chalcogenides)
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87.64.km
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(Infrared)
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87.64.kp
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(Raman)
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| Fund: Project partially supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0303802 and 2016YFB0303803), the National Natural Science Foundation of China (Grant No. 61775110), and also sponsored by K C Wong Magna Fund in Ningbo University. |
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Corresponding Authors:
†Corresponding author. E-mail: linchanggui@nbu.edu.cn
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Cite this article:
Qilin Ye(叶旗林), Dan Chen(陈旦), and Changgui Lin(林常规) Glass formation and physical properties of Sb 2S 3-CuI chalcogenide system 2021 Chin. Phys. B 30 016302
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