Raman scattering from highly-stressed anvil diamond
Shan Liu(刘珊)1, Qiqi Tang(唐琦琪)1, Binbin Wu(吴彬彬)1, Feng Zhang(张峰)1, Jingyi Liu(刘静仪)1, Chunmei Fan(范春梅)1, and Li Lei(雷力)1,2,†
1 Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China; 2 Key Laboratory of High Energy Density Physics and Technology (Ministry of Education), Sichuan University, Chengdu 610065, China
Abstract The high-frequency edge of the first-order Raman mode of diamond reflects the stress state at the culet of anvil, and is often used for the pressure calibration in diamond anvil cell (DAC) experiments. Here we point out that the high-frequency edge of the diamond Raman phonon corresponds to the Brillouin zone (BZ) center point as a function of pressure. The diamond Raman pressure gauge relies on the stability of crystal lattice of diamond under high stress. Upon the diamond anvil occurs failure under the uniaxial stress (197 GPa), the loss of intensity of the first-order Raman phonon and a stress-dependent broad Raman band centered at 600 cm - 1 are observed, which is associated with a strain-induced local mode corresponding to the BZ edge phonon of the L1 transverse acoustic phonon branch.
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