Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film
Zhen Wang(王振)1, Shi-Jie Tan(谭士杰)1,2, Jun Li(李俊)1, Bo Dai(代波)1, Yan-Ke Zou(邹延珂)2
1 State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China; 2 The 9 th Institute of China Electronics Technology Group Corporation, Mianyang 621000, China
Abstract In this paper, Ta/[NiFe(15 nm)/FeMn(10 nm)]/Ta exchange-biased bilayers are fabricated by magnetron sputtering, and their static and dynamic magnetic properties before and after rapid annealing treatment with pulsed current are characterized by using a vibrating sample magnetometer (VSM) and a vector network analyzer (VNA), respectively. The exchange bias field He and static anisotropy field Hksta decrease from 118.45 Oe (1 Oe=79.5775 A·m-1) and 126.84 Oe at 0 V to 94.75 Oe and 102.31 Oe at 90 V, respectively, with increasing capacitor voltage, which supplies pulsed current to heat the sample. The effect of flash thermal annealing by pulsed current on the rotational anisotropy (Hrot), the difference value between static and dynamic magnetic anisotropy, is investigated particularly. The highest Hrot is obtained in the sample annealing with 45-V capacitor (3300 μF) voltage. According to the anisotropic magnetoresistance measurements, it can be explained by the fact that the temperature of the sample is around the blocking temperature of the exchange bias system (Tb) at 45 V, the critical temperature where the formation of more unstable antiferromagnetic grains occurs.
Fund: Project supported by the Young Science and Technology Innovation Team of Sichuan Province, China (Grant No. 2017TD0020).
Corresponding Authors:
Zhen Wang
E-mail: wangzhen@swust.edu.cn
Cite this article:
Zhen Wang(王振), Shi-Jie Tan(谭士杰), Jun Li(李俊), Bo Dai(代波), Yan-Ke Zou(邹延珂) Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film 2018 Chin. Phys. B 27 087504
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