| CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES |
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Segregations and desorptions of Ge atoms in nanocomposite Si1-xGex films during high-temperature annealing |
| Yu Wang(汪煜)1, Meng Yang(杨濛)1, Gang Wang(王刚)1, Xiao-Xu Wei(魏晓旭)1, Jun-Zhuan Wang(王军转)1, Yun Li(李昀)1, Ze-Wen Zou(左则文)2, You-Dou Zheng(郑有炓)1, Yi Shi(施毅)1 |
1. Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2. College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000, China |
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Abstract Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD). The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the annealing temperature (Ta) is 900℃, the nanocomposite Si1-xGex films are well crystallized, and nanocrystals (NCs) with the core-shell structure form in the films. After being annealed at 1000℃ (above the melting point of bulk Ge), Ge atoms accumulate on the surfaces of Ge-rich films, whereas pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.
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Received: 18 August 2017
Revised: 31 August 2017
Accepted manuscript online:
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PACS:
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68.55.-a
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(Thin film structure and morphology)
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68.55.A-
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(Nucleation and growth)
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Corresponding Authors:
Yi Shi
E-mail: yshi@nju.edu.cn
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Cite this article:
Yu Wang(汪煜), Meng Yang(杨濛), Gang Wang(王刚), Xiao-Xu Wei(魏晓旭), Jun-Zhuan Wang(王军转), Yun Li(李昀), Ze-Wen Zou(左则文), You-Dou Zheng(郑有炓), Yi Shi(施毅) Segregations and desorptions of Ge atoms in nanocomposite Si1-xGex films during high-temperature annealing 2017 Chin. Phys. B 26 126801
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| [1] |
Fu Q, Zhang W R, Jin D Y, Ding C B, Zhao Y X and Lu D 2014 Chin. Phys. B 23 114402
|
| [2] |
Schmidt J, Korn J, Fischer G G and Sorge R 2017 IEEE Trans. Nucl. Sci. 64 1037
|
| [3] |
Dwivedi A D D, Chakravorty A, D'esposito R, Sahoo A K, Fregonese S and Zimmer T 2016 Solid-State Electronics 115 1
|
| [4] |
Durmaz H, Sookchoo P, Cui X, Jacobson R B, Savage D E, Lagally M G and Paiella, R 2016 ACS Photonics 3 1978
|
| [5] |
Ali D and Richardson C J 2014 Appl. Phys. Lett. 105 031116
|
| [6] |
Li T T, Yang T, Fang J, Zhang D K, Sun J, Wei C C, Xu S Z, Wang G C, Liu C C, Zhao Y and Zhang X D 2016 Chin. Phys. B 25 046101
|
| [7] |
Ganguly G, Ikeda T, Nishimiya T, Saitoh K, Kondo M and Matsuda A 1996 Appl. Phys. Lett. 69 4224
|
| [8] |
Yan B, Zhao L, Chen J, Wang G, Diao H, Mao Y and Wang W 2013 Vacuum 89 43
|
| [9] |
Vining C B, Laskow W, Hanson J O, Van der Beck R R and Gorsuch P D 1991 J. Appl. Phys. 69 4333
|
| [10] |
Rowe D M, Shukla V S and Savvides N 1981 Nature 290 765
|
| [11] |
Joshi G, Lee H, Lan Y C, Wang X W, Zhu G H, Wang D Z, Gould R W, Cuff D C, Tang M Y, Dresselhaus M S, Chen G and Ren Z F 2008 Nano Lett. 8 4670
|
| [12] |
Wang X W, Lee H, Lan Y C, Zhu G H, Joshi G, Wang D Z, Yang J, Muto A J, Tang M Y, Klatsky J, Song S, Dresselhaus M S, Chen G and Ren Z F 2008 Appl. Phys. Lett. 93 193121
|
| [13] |
Xie W, Wang S, Zhu S, He J, Tang X, Zhang Q and Tritt T M 2013 J. Mater. Sci. 48 2745
|
| [14] |
Poudel B, Hao Q, Ma Y, Lan Y C, Minnich A, Yu B, Yan X, Wang D Z, Muto A, Vashaee D, Chen X Y, Liu J M, Dresselhaus M S, Chen G and Ren Z F 2008 Science 320 634
|
| [15] |
Gresback R, Holman Z and Kortshagen U 2007 Appl. Phys. Lett. 91 093119
|
| [16] |
Pi X D and Kortshagen U 2009 Nanotechnology 20 295602
|
| [17] |
Yang Y M, Wu X L, Siu G G, Huang G S, Shen J C and Hu D S 2004 J. Appl. Phys. 96 5239
|
| [18] |
Zuo Z W, Wang Y, Lu J, Wang J J, Pu L, Shi Y and Zheng Y D 2012 Vacuum 86 924
|
| [19] |
Wang Y, Yang M, Wang G, Wei X X, Wang J Z, Li Y, Zuo Z W, Zheng Y D and Shi Y 2015 AIP Advances 5 117127
|
| [20] |
Murley D T, Gibson R A G, Dunnett B, Goodyear A and French I D 1995 J. Non-Cryst. Solids 187 324
|
| [21] |
Ifuku T, Otobe M, Itoh A and Oda S 1997 Jpn. J. Appl. Phys. 36 4031
|
| [22] |
Alonso M I and Winer K 1989 Phys. Rev. B 39 10056
|
| [23] |
Liu L Z, Wu X L, Shen J C, Li T H, Gao F and Chu P K 2010 Chem. Commun. 46 5539
|
| [24] |
Tzoumanekas C and Kelires P C 2000 J. Non-Cryst. Solids 266 670
|
| [25] |
Tzoumanekas C and Kelires P C 2003 Appl. Phys. Lett. 82 4681
|
| [26] |
Zhang Z, Pan J S, Zhang J and Tok E S 2010 PCCP 12 7171
|
| [27] |
Walther T, Humphreys C J and Cullis A G 1997 Appl. Phys. Lett. 71 809
|
| [28] |
Fukatsu S, Fujita K, Yaguchi H, Shiraki Y and Ito R 1991 Appl. Phys. Lett. 59 2103
|
| [29] |
Tok E S, Woods N J and Zhang J 2000 J. Cryst. Growth 209 321
|
| [30] |
Vallat-Sauvain E, Kroll U, Meier J, Shah A and Pohl J 2000 J. Appl. Phys. 87 3137
|
| [31] |
Heitjans P and Kärger J (eds) 2006 Diffusion in condensed matter:methods, materials, models (Berlin:Springer Science & Business Media) p. 331
|
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