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Special Issue:
SPECIAL TOPIC — Fabrication and manipulation of the second-generation quantum systems
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| SPECIAL TOPIC—Fabrication and manipulation of the second-generation quantum systems |
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Sign reversal of anisotropic magnetoresistance and anomalous thickness-dependent resistivity in Sr2CrWO6/SrTiO3 films |
| Chunli Yao(姚春丽)1, Tingna Shao(邵婷娜)1, Mingrui Liu(刘明睿)1,2, Zitao Zhang(张子涛)1, Weimin Jiang(姜伟民)1, Qiang Zhao(赵强)1, Yujie Qiao(乔宇杰)1, Meihui Chen(陈美慧)1, Xingyu Chen(陈星宇)1, Ruifen Dou(窦瑞芬)1,†, Changmin Xiong(熊昌民)1,‡, and Jiacai Nie(聂家财)1,‡ |
1. Department of Physics, Beijing Normal University, Beijing 100875, China;
2. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China |
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Abstract High-quality Sr2CrWO6 (SCWO) films have been grown on SrTiO3 (STO) substrate by pulsed laser deposition under low oxygen pressure. With decrease of the film thickness, a drastic conductivity increase is observed. The Hall measurements show that the thicker the film, the lower the carrier density. An extrinsic mechanism of charge doping due to the dominance of oxygen vacancies at SCWO/STO interfaces is proposed. The distribution and gradient of carrier concentration in SCWO films are considered to be related to this phenomenon. Resistivity behavior observed in these films is found to follow the variable range hopping model. It is revealed that with increase of the film thickness, the extent of disorder in the lattice increases, which gives a clear evidence of disorder-induced localization charge carriers in these films. Magnetoresistance measurements show that there is a negative magnetoresistance in SCWO films, which is considered to be caused by the magnetic scattering of magnetic elements Cr3+ and W5+. In addition, a sign reversal of anisotropic magnetoresistance (AMR) in SCWO film is observed for the first time, when the temperature varies across a characteristic value, TM. Magnetization—temperature measurements demonstrate that this AMR sign reversal is caused by the direction transition of easy axis of magnetization from the in-plane ferromagnetic order at T > TM to the out-of-plane at T < TM.
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Received: 20 January 2022
Revised: 06 March 2022
Accepted manuscript online:
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PACS:
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73.25.+i
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(Surface conductivity and carrier phenomena)
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68.47.Gh
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(Oxide surfaces)
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74.25.F-
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(Transport properties)
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75.30.Gw
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(Magnetic anisotropy)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 92065110, 11974048, and 12074334). |
Corresponding Authors:
Ruifen Dou, Changmin Xiong, Jiacai Nie
E-mail: ruifendou@bnu.edu.cn;cmxiong@bnu.edu.cn;jcnie@bnu.edu.cn
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Cite this article:
Chunli Yao(姚春丽), Tingna Shao(邵婷娜), Mingrui Liu(刘明睿), Zitao Zhang(张子涛), Weimin Jiang(姜伟民), Qiang Zhao(赵强), Yujie Qiao(乔宇杰), Meihui Chen(陈美慧), Xingyu Chen(陈星宇), Ruifen Dou(窦瑞芬), Changmin Xiong(熊昌民), and Jiacai Nie(聂家财) Sign reversal of anisotropic magnetoresistance and anomalous thickness-dependent resistivity in Sr2CrWO6/SrTiO3 films 2022 Chin. Phys. B 31 107302
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