Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

doi:10.1088/1674-1056/24/4/046103

Abstract By using the pulsed laser single event effect facility and electro-static discharge (ESD) test system, the characteristics of the “high current”, relation with external stimulus and relevance to impacted modes of single event latch-up (SEL) and transient-induced latch-up (TLU) are studied, respectively, for a 12-bit complementary metal-oxide semiconductor (CMOS) analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between “high current” induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the “high current” induced by SEL and for that by TLU. However, for SEL, the minority carrier diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node (the ground node) is the cause of the minority carrier diffusion for TLU.

Keywords: single event latch-up transient-induced latch-up electro-static discharge pulsed laser

Received: 19 August 2014
Revised: 10 October 2014
Accepted manuscript online:

PACS:	61.80.Jh	(Ion radiation effects)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 41304148).

Corresponding Authors: Chen Rui
E-mail: chenrui632@sina.com

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Chen Rui (陈睿), Han Jian-Wei (韩建伟), Zheng Han-Sheng (郑汉生), Yu Yong-Tao (余永涛), Shangguan Shi-Peng (上官士鹏), Feng Guo-Qiang (封国强), Ma Ying-Qi (马英起) Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up 2015 Chin. Phys. B 24 046103

[1]	Kolasinski W A, Blake J B, Anthony J K, Price W E and Smith E C 1979 IEEE Trans. Nucl. Sci. 26 5087
[2]	Leavy J F and Poll R A 1969 IEEE Trans. Nucl. Sci. 16 96
[3]	Iwata H and Ohzone T 1995 IEEE Trans. Nucl. Sci. 42 148
[4]	Voldman S H, Gebreselasie E, Zierak M, Hershberger D, Collins D, Feilchenfeld N, Onge S St and Dunn J 2005 Proceedings of the 43th Annual International Reliability Physics Symposium, April 17-21, 2005, San Jose, USA, p. 129
[5]	Dodds N A, Hooten N C, Reed R A, Schrimpf R D, Warner J H, Roche N J H, McMorrow D, Wen S J, Wong R, Salzman J F, Jordan S, Pellish J A, Marshall C J, Gaspard N J, Bennett W G, Zhang E X and Bhuva B L 2012 IEEE Trans. Nucl. Sci. 59 2642
[6]	Ker M D and Hsu S F 2005 IEEE Trans. Electron Dev. 52 1821
[7]	Ker M D and Hsu S F 2006 IEEE Trans. Dev. Mater. Reliab. 6 461
[8]	Voldman S H 2007 Latchup (Hobenken: John Wiley & Sons Inc.) pp. 125-184
[9]	Chen R, Yu Y T, Shangguan S P, Feng G Q and Han J W 2014 Acta Phys. Sin. 63 128501 (in Chinese)
[10]	Chen J J, Chen S M, Liang B and Deng K F 2012 Chin. Phys. B 21 016103
[11]	Han J W, Zhang Z L, Feng G Q and Ma Y Q 2009 Spacecraft Environment Engineering 26 125 (in Chinese)
[12]	Gaspard N J, Witulski A F, Atkinson N, Ahlbin J R, Holman W T, Bhuva B L, Loveless T D and Massengill L W 2011 IEEE Trans. Nucl. Sci. 58 2614
[13]	Sukhaseum N, Samaras A, Du D L, Vandevelde B, Chatry N and Bezerra F 2012 Proceedings of the 13th European Conference on Radiation and Its Effects on Components and Systems, September 24-28, 2012, Biarritz, France
[14]	Dodds N A 2012 "Single event latchup hardening strategies, trigging mechanisms, and testing considerations", Ph. D. Thesis (Nathaniel: Graduate School of Vanderbilt University)
[15]	Burnell A J, Chugg A M and Harboe-Sorensen R 2010 IEEE Trans. Nucl. Sci. 57 1973

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Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

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