Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

doi:10.1088/1674-1056/26/9/098505

Abstract In this study, we investigate the single-event transient (SET) characteristics of a partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor (MOS) device induced by a pulsed laser.We measure and analyze the drain transient current at the wafer level. The results indicate that the body-drain junction and its vicinity are more SET sensitive than the other regions in PD-SOI devices.We use ISE 3D simulation tools to analyze the SET response when different regions of the device are hit. Then, we discuss in detail the characteristics of transient currents and the electrostatic potential distribution change in devices after irradiation. Finally, we analyze the parasitic bipolar junction transistor (p-BJT) effect by performing both a laser test and simulations.

Keywords: single-event transient pulsed laser parasitic bipolar junction transistor partially depleted silicon on insulator

Received: 17 April 2017
Revised: 15 May 2017
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	94.05.Dd	(Radiation processes)
	61.80.Ed	(γ-ray effects)

Fund: Project supported by Funds of Key Laboratory, China (Grant No. y7ys011001) and Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. y5yq01r002).

Corresponding Authors: Chuan-Bin Zeng
E-mail: chbzeng@ime.ac.cn

Cite this article:

Wei-Wei Yan(闫薇薇), Lin-Chun Gao(高林春), Xiao-Jing Li(李晓静), Fa-Zhan Zhao(赵发展), Chuan-Bin Zeng(曾传滨), Jia-Jun Luo(罗家俊), Zheng-Sheng Han(韩郑生) Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET 2017 Chin. Phys. B 26 098505

[1]	Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Paillet P and Dodd P E 2003 IEEE Trans. Nuc. Sci. 50 522536
[2]	Chou R, Kavalieros J, Doyle B, Murthy A, Paulsen N, Lionberger D, Barlage D, Arghavani R, Roberds B and Doczy M 2001 IEDM Tech. Dig. 621
[3]	Musseau O and Ferlet-Cavrois V 2001 NSREC short course
[4]	AllesM L 1994 IEEE Trans. Nucl. Sci. 41 2093
[5]	AllesM L, Kerns S E, Massengill L W, Clark J E, Jones Jr K L and Lowther R E 1991 IEEE Trans. Nucl. Sci. 38 1259
[6]	Poivey C, Buchner S, Howard J and Label K 2016 Testing Guidelines for Single Event Transient (SET) Testing of Linear Devices
[7]	Baumann R C 2005 Proc. IEEE Nuclear and Space Radiation Effects Conf. short course
[8]	Melinger J S, Buchner S, Mcmorrow D, Stapor W J, Weatherford T R and Campbell A B 1994 IEEE Trans. Nuc. Sci. 41 2582
[9]	Buchner S, Kang K, Stapor W J, Campbell A B, KnudsonA R, Mcdonald P and Rivet S 1990 IEEE Trans. Nuc. Sci. NS-37 1825
[10]	Musseau O, Ferlet-Cavrois V, Pelloie L, Buchner S, Mcmorrow D and Campbell A B 2000 IEEE Trans. Nuc. Sci. 47 2197
[11]	Ferlet-Cavrois V, Paillet P, Mcmorrow D, Fel N, Baggio J, Girard S, Duhamel O, Melinger J S, Gaillardin M, Schrank J R, Dodd P E, Shaneyfelt M R and Felix J A 2007 IEEE Trans. Nuc. Sci. 54 2339
[12]	Buchner S, Knudson A R, Kang K and Campbell A B 1988 IEEE Trans Nuc. Sci. NS-35 1517
[13]	Zhang X C, Yue S G, Wang L and Li J C 2010 ⅡRW FINAL REPORT 149
[14]	Zhuo Q Q, Liu H X and H Y 2012 Acta Phys. Sin. 61 218501 (in Chinese)
[15]	Qin J R, Chen S M, Li D W, Liang B and Liu B W 2012 Chin. Phys. B 21 089401
[16]	Kobayashi D, Saito H and Hirose K 2007 IEEE Trans. Nuc. Sci. 54 1037
[17]	Velacheri S, Massengill L W and Kerns S E 1994 IEEE Trans. Nuc. Sci. 41 2104
[18]	Fulkerson D E and Liu H 2004 IEEE Trans. Nuc. Sci. 51 278

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Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

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