F4-TCNQ concentration dependence of the current–voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode

doi:10.1088/1674-1056/23/11/117306

Abstract In this study, we investigate some main electrical parameters of the gold/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester:2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon (Au/P3HT:PCBM:F4-TCNQ/n-Si) metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD) in terms of the effects of F4-TCNQ concentration (0%, 1%, and 2%). F4-TCNQ-doped P3HT:PCBM is fabricated to figure out the p-type doping effect on the device performance. The main electrical parameters, such as ideality factor (n), barrier height (Φ_B0), series resistance (R_s), shunt resistance (R_sh), and density of interface states (N_ss) are determined from the forward and reverse bias current-voltage (I-V) characteristics in the dark and at room temperature. The values of n, R_s, Φ_B0, and N_ss are significantly reduced by using the 1% F4-TCNQ doping in P3HT:PCBM:F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft (1%) doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping (2%) become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT:PCBM:F4-TCNQ organic layer. Moreover, the soft F4-TCNQ doping concentration (1%) in P3HT:PCBM:F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.

Keywords: P3HT:PCBM:F4-TCNQ interfacial organic layer F4-TCNQ doping concentration Schottky barrier diodes I-V characteristics

Received: 30 June 2014
Revised: 25 July 2014
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.61.Ph	(Polymers; organic compounds)
	81.05.Fb	(Organic semiconductors)
	85.30.Hi	(Surface barrier, boundary, and point contact devices)

Corresponding Authors: Ö. Tüzün Özmen
E-mail: ozgetuzun@duzce.edu.tr

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E. Yağlıoğlu, Ö. Tüzün Özmen F4-TCNQ concentration dependence of the current–voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode 2014 Chin. Phys. B 23 117306

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F4-TCNQ concentration dependence of the current–voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode

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