Al/Ti/4H–SiC Schottky barrier diodes with inhomogeneous barrier heights

doi:10.1088/1674-1056/20/8/087305

Abstract This paper investigates the current--voltage ($I$--$V$) characteristics of Al/Ti/4H--SiC Schottky barrier diodes (SBDs) in the temperature range of 77 K--500 K, which shows that Al/Ti/4H--SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature ($T$), has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the Al/Ti/4H--SiC interface. The effective Richardson constant $A^*=154$ A/cm$^{2}$ $\cdot$ K$^{2}$ is determined by means of a modified Richardson plot $\ln(I_{0}/T^{2})-(q\sigma )^{2}/2(kT)^{2}$ versus $q/kT$, which is very close to the theoretical value 146~A/cm$^{2}$ $\cdot$ K$^{2}$.

Keywords: Schottky contact 4H—SiC barrier height inhomogeneity temperature

Received: 06 December 2010
Revised: 01 March 2011
Accepted manuscript online:

PACS:	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	73.40.Sx	(Metal-semiconductor-metal structures)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60876061) and the Key Laboratory Science Foundation (Grant No. 20090C1403).

Cite this article:

Wang Yue-Hu(王悦湖), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Song Qing-Wen(宋庆文), and Jia Ren-Xu(贾仁需) Al/Ti/4H–SiC Schottky barrier diodes with inhomogeneous barrier heights 2011 Chin. Phys. B 20 087305

[1]	Zhao J H, Alexandorov P and Li X 2003 IEEE Electron Device Lett. 24 402
[2]	Song Q W, Zhang Y M, Zhang Y M, Lü H L, Chen F P and Zheng Q L 2009 Chin. Phys. B 18 5474
[3]	Saxena V, Jian N S and Steckl A J 1999 IEEE Trans. Electron Devices 46 456
[4]	Song Q W, Zhang Y M, Zhang Y M, Zheng Q and Lü H L 2010 it Chin. Phys. B 19 087202
[5]	Via F L, Galvagno G, Roccaforte F, Ruggiero A and Calcagno L 2005 Appl. Phys. Lett. bf87 142105
[6]	Pakma O, Serin N, Serin T and Altindal X 2008 it J. Appl. Phys. 104 014501
[7]	Defives D, Noblanc O, Dua C, Brylinski C, Barthula M, Fortuna V A and Meyer F 1999 IEEE Trans. Electron Devices 46 449
[8]	Yidiz D E, Altindal S and Kanbur H 2008 J. Appl. Phys. bf 103 124502
[9]	Ewing D J and Porter L M 2007 J. Appl. Phys. 101 114514
[10]	Biber M, Gullu O, Duman S and Turut A 2007 Appl. Surf. Sci. 253 7246
[11]	Tacscchioglu .I, Aydemir U and Althindal cS2010 J. Appl. Phys. 108 064506
[12]	Tung R T 1992 Phys. Rev. B bf45 13509

[1]	Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红). Chin. Phys. B, 2023, 32(3): 038502.
[2]	A 3-5 μm broadband YBCO high-temperature superconducting photonic crystal Gang Liu(刘刚), Yuanhang Li(李远航), Baonan Jia(贾宝楠), Yongpan Gao(高永潘), Lihong Han(韩利红), Pengfei Lu(芦鹏飞), and Haizhi Song(宋海智). Chin. Phys. B, 2023, 32(3): 034213.
[3]	In situ temperature measurement of vapor based on atomic speed selection Lu Yu(于露), Li Cao(曹俐), Ziqian Yue(岳子骞), Lin Li(李林), and Yueyang Zhai(翟跃阳). Chin. Phys. B, 2023, 32(2): 020602.
[4]	Giant low-field cryogenic magnetocaloric effect in polycrystalline LiErF₄ compound Zhaojun Mo(莫兆军), Jianjian Gong(巩建建), Huicai Xie(谢慧财), Lei Zhang(张磊), Qi Fu(付琪), Xinqiang Gao(高新强), Zhenxing Li(李振兴), and Jun Shen(沈俊). Chin. Phys. B, 2023, 32(2): 027503.
[5]	Growth behaviors and emission properties of Co-deposited MAPbI₃ ultrathin films on MoS₂ Siwen You(游思雯), Ziyi Shao(邵子依), Xiao Guo(郭晓), Junjie Jiang(蒋俊杰), Jinxin Liu(刘金鑫), Kai Wang(王凯), Mingjun Li(李明君), Fangping Ouyang(欧阳方平), Chuyun Deng(邓楚芸), Fei Song(宋飞), Jiatao Sun(孙家涛), and Han Huang(黄寒). Chin. Phys. B, 2023, 32(1): 017901.
[6]	Temperature characterizations of silica asymmetric Mach-Zehnder interferometer chip for quantum key distribution Dan Wu(吴丹), Xiao Li(李骁), Liang-Liang Wang(王亮亮), Jia-Shun Zhang(张家顺), Wei Chen(陈巍), Yue Wang(王玥), Hong-Jie Wang(王红杰), Jian-Guang Li(李建光), Xiao-Jie Yin(尹小杰), Yuan-Da Wu(吴远大), Jun-Ming An(安俊明), and Ze-Guo Song(宋泽国). Chin. Phys. B, 2023, 32(1): 010305.
[7]	Heat transport properties within living biological tissues with temperature-dependent thermal properties Ying-Ze Wang(王颖泽), Xiao-Yu Lu(陆晓宇), and Dong Liu(刘栋). Chin. Phys. B, 2023, 32(1): 014401.
[8]	Finite superconducting square wire-network based on two-dimensional crystalline Mo₂C Zhen Liu(刘震), Zi-Xuan Yang(杨子萱), Chuan Xu(徐川), Jia-Ji Zhao(赵嘉佶), Lu-Junyu Wang(王陆君瑜), Yun-Qi Fu(富云齐), Xue-Lei Liang(梁学磊), Hui-Ming Cheng(成会明), Wen-Cai Ren(任文才), Xiao-Song Wu(吴孝松), and Ning Kang(康宁). Chin. Phys. B, 2022, 31(9): 097404.
[9]	Numerical simulation of the thermal non-equilibrium flow-field characteristics of a hypersonic Apollo-like vehicle Minghao Yu(喻明浩)^†, Zeyang Qiu(邱泽洋), Bo Lv(吕博), and Zhe Wang(王哲). Chin. Phys. B, 2022, 31(9): 094702.
[10]	Optical fiber FBG linear sensing systems for the on-line monitoring of airborne high temperature air duct leakage Qinyu Wang(王沁宇), Xinglin Tong(童杏林), Cui Zhang(张翠), Chengwei Deng(邓承伟), Siyu Xu(许思宇), and Jingchuang Wei(魏敬闯). Chin. Phys. B, 2022, 31(8): 084204.
[11]	A 658-W VCSEL-pumped rod laser module with 52.6% optical efficiency Xue-Peng Li(李雪鹏), Jing Yang(杨晶), Meng-Shuo Zhang(张梦硕), Tian-Li Yang(杨天利), Xiao-Jun Wang(王小军), and Qin-Jun Peng(彭钦军). Chin. Phys. B, 2022, 31(8): 084207.
[12]	Core structure and Peierls stress of the 90° dislocation and the 60° dislocation in aluminum investigated by the fully discrete Peierls model Hao Xiang(向浩), Rui Wang(王锐), Feng-Lin Deng(邓凤麟), and Shao-Feng Wang(王少峰). Chin. Phys. B, 2022, 31(8): 086104.
[13]	Magnetic properties of a mixed spin-3/2 and spin-2 Ising octahedral chain Xiao-Chen Na(那小晨), Nan Si(司楠), Feng-Ge Zhang(张凤阁), and Wei Jiang(姜伟). Chin. Phys. B, 2022, 31(8): 087502.
[14]	Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition Zhi-Fu Zhu(朱志甫), Shao-Tang Wang(王少堂), Ji-Jun Zou(邹继军), He Huang(黄河), Zhi-Jia Sun(孙志嘉), Qing-Lei Xiu(修青磊), Zhong-Ming Zhang(张忠铭), Xiu-Ping Yue(岳秀萍), Yang Zhang(张洋), Jin-Hui Qu(瞿金辉), and Yong Gan(甘勇). Chin. Phys. B, 2022, 31(8): 086103.
[15]	A radiation-temperature coupling model of the optical fiber attenuation spectrum in the Ge/P co-doped fiber Yong Li(李勇), Haoshi Zhang(张浩石), Xiaowei Wang(王晓伟), and Jing Jin(金靖). Chin. Phys. B, 2022, 31(7): 074211.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Al/Ti/4H–SiC Schottky barrier diodes with inhomogeneous barrier heights

Cite this article:

Online attention