Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

doi:10.1088/1674-1056/28/2/027303

Abstract In this paper, we investigate the influence of deep level defects on the electrical properties of Ni/4H-SiC Schottky diodes by analyzing device current-voltage (I-V) characteristics and deep-level transient spectra (DLTS). Two Schottky barrier heights (SBHs) with different temperature dependences are found in Ni/4H-SiC Schottky diode above room temperature. DLTS measurements further reveal that two kinds of defects Z_1/2 and Ti(c)^a are located near the interface between Ni and SiC with the energy levels of E_C-0.67 eV and E_C-0.16 eV respectively. The latter one as the ionized titanium acceptor residing at cubic Si lattice site is thought to be responsible for the low SBH in the localized region of the diode, and therefore inducing the high reverse leakage current of the diode. The experimental results indicate that the Ti(c)^{rm a} defect has a strong influence on the electrical and thermal properties of the 4H-SiC Schottky diode.

Keywords: 4H-SiC Schottky diodes Schottky barrier heights deep defects DLTS

Received: 28 August 2018
Revised: 27 November 2018
Accepted manuscript online:

PACS:	73.40.Sx	(Metal-semiconductor-metal structures)
	61.72.J-	(Point defects and defect clusters)
	71.55.-i	(Impurity and defect levels)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)

Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400402).

Corresponding Authors: Ping Han, Xiao-Li Ji
E-mail: hanping@nju.edu.cn;xji@nju.edu.cn

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Jin-Lan Li(李金岚), Yun Li(李赟), Ling Wang(汪玲), Yue Xu(徐跃), Feng Yan(闫锋), Ping Han(韩平), Xiao-Li Ji(纪小丽) Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode 2019 Chin. Phys. B 28 027303

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Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

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