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Chin. Phys. B, 2015, Vol. 24(7): 077306    DOI: 10.1088/1674-1056/24/7/077306

Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride

Wei Jiang-Bin (魏江镔)a, Chi Xiao-Wei (池晓伟)a, Lu Chao (陆超)a, Wang Chen (王尘)a, Lin Guang-Yang (林光杨)a, Wu Huan-Da (吴焕达)a, Huang Wei (黄巍)a, Li Cheng (李成)a, Chen Song-Yan (陈松岩)a, Liu Chun-Li (刘春莉)b
a Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;
b Department of Physics, Hankuk University of Foreign Studies, Yongin 449-791, Korea
Abstract  Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN0.38/n-Ge Schottky contact exhibits quasi-Ohmic current–voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.
Keywords:  germanium      Fermi-level pinning      Schottky barrier height modulation      tungsten nitride  
Received:  22 December 2014      Revised:  02 February 2015      Accepted manuscript online: 
PACS:  73.40.Sx (Metal-semiconductor-metal structures)  
  73.40.Ei (Rectification)  
  73.61.At (Metal and metallic alloys)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61176092 and 61474094), the National Basic Research Program of China (Grant Nos. 2012CB933503 and 2012CB632103), and the National Natural Science Foundation of China-National Research Foundation of Korea Joint Research Project (Grant No. 11311140251).
Corresponding Authors:  Huang Wei, Li Cheng     E-mail:;

Cite this article: 

Wei Jiang-Bin (魏江镔), Chi Xiao-Wei (池晓伟), Lu Chao (陆超), Wang Chen (王尘), Lin Guang-Yang (林光杨), Wu Huan-Da (吴焕达), Huang Wei (黄巍), Li Cheng (李成), Chen Song-Yan (陈松岩), Liu Chun-Li (刘春莉) Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride 2015 Chin. Phys. B 24 077306

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