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Chin. Phys. B, 2014, Vol. 23(2): 028503    DOI: 10.1088/1674-1056/23/2/028503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes

Li Xiao-Jing (李晓静)a, Zhao De-Gang (赵德刚)a, Jiang De-Sheng (江德生)a, Liu Zong-Shun (刘宗顺)a, Chen Ping (陈平)a, Wu Liang-Liang (吴亮亮)a, Li Liang (李亮)a, Le Ling-Cong (乐伶聪)a, Yang Jing (杨静)a, He Xiao-Guang (何晓光)a, Wang Hui (王辉)b, Zhu Jian-Jun (朱建军)b, Zhang Shu-Ming (张书明)b, Zhang Bao-Shun (张宝顺)b, Yang Hui (杨辉)a b
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
Abstract  The influences of polarization and p-region doping concentration on the photocurrent response of Al0.4Ga0.6N/Al0.4Ga0.6N/Al0.65Ga0.35N p–i–n avalanche photodetector are studied in a wide range of reverse bias voltages. The simulation results indicate that the photocurrent under high inverse bias voltage decreases with the increase of polarization effect, but increases rapidly with the increase of effective doping concentration in p-type region. These phenomena are analyzed based on the calculations of the intensity and distribution of the electric field. A high p-region doping concentration in the p–i–n avalanche photodetector is shown to be important for the efficient compensation for the detrimental polarization-induced electrostatic field.
Keywords:  nitride materials      photodetector      polarization  
Received:  20 March 2013      Revised:  03 May 2013      Accepted manuscript online: 
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  77.22.Ej (Polarization and depolarization)  
  74.72.Gh (Hole-doped)  
Fund: Project supported by the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, 60976045, and 61176126), and the Tsinghua National Laboratory for Information Science and Technology Cross-discipline Foundation.
Corresponding Authors:  Zhao De-Gang     E-mail:  dgzhao@red.semi.ac.cn
About author:  85.60.Gz; 77.22.Ej; 74.72.Gh

Cite this article: 

Li Xiao-Jing (李晓静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Chen Ping (陈平), Wu Liang-Liang (吴亮亮), Li Liang (李亮), Le Ling-Cong (乐伶聪), Yang Jing (杨静), He Xiao-Guang (何晓光), Wang Hui (王辉), Zhu Jian-Jun (朱建军), Zhang Shu-Ming (张书明), Zhang Bao-Shun (张宝顺), Yang Hui (杨辉) Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes 2014 Chin. Phys. B 23 028503

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