|
|
|
Electronic and transport properties of V-shaped defect zigzag MoS2 nanoribbons |
| Mengqiu Long |
| Institute of Super-microstructure and Ultrafast Process in Advanced Materials (ISUPAM), School of Physics and Electronics, Central South University |
|
|
|
|
Abstract Based on nonequilibrium Green’s function in combination with density functional theory (DFT) calculations, we studied the electronic structure and transport properties of zigzag MoS2 nanoribbons (ZMNRs) with V-shaped vacancy defects on the edge. The vacancy formation energy results show that the zigzag vacancy is easier to be created on the edge of ZMNRs than the armchair vacancy. And both of the defects can make the electronic band structures of ZMNRs changing from metal to semiconductor. The electronic transport properties calculations depict that the currents drop clearly and rectification phenomenon appears in the defected systems. These effects would present a possibility in novel nanoelectronic devices application.
|
Received: 13 August 2013
Revised: 19 September 2013
Published: 31 October 2013
|
| Fund: ;National Fundamental Research Program of Cina |
|
Corresponding Authors:
Mengqiu Long
|
Cite this article:
Mengqiu Long Electronic and transport properties of V-shaped defect zigzag MoS2 nanoribbons Chin. Phys. B 0
|
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
| |
Shared |
|
|
|
|
| |
Discussed |
|
|
|
|
