CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters |
Yang Wei (杨薇), Wu Yi-Yang (武翌阳), Liu Ning-Yang (刘宁炀), Liu Lei (刘磊), Chen Zhao (陈钊), Hu Xiao-Dong (胡晓东) |
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China |
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Abstract We theoretically investigate the optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet (374 nm) to green (536 nm) with InN quantum well thickness increasing from 1 monolayer to 2 monolayers, while the overlap of electron-hole wave function remains at a high level (larger than 90%). Increase of In content in InGaN matrix provides a better approach to longer wavelength emission, which only reduces the spontaneous emission rate slightly compared with the case of increasing In content of the conventional InGaN quantum well. Also, the transparency carrier density derived from gain spectrum is of the same order as that in the conventional blue laser diode. Our study provides skillful design on the development of novel structure InN-based light emitting diodes as well as laser diodes.
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Received: 29 June 2012
Revised: 21 August 2012
Accepted manuscript online:
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PACS:
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78.20.Bh
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(Theory, models, and numerical simulation)
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78.55.Cr
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(III-V semiconductors)
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78.67.De
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(Quantum wells)
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076013, 51272008, and 51102003), the National Basic Research Program of China (Grant No. 2012CB619304), the Beijing Municipal Science & Technology Commission (Grant No. D111100001711002), and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20100001120014). |
Corresponding Authors:
Hu Xiao-Dong
E-mail: huxd@pku.edu.cn
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Cite this article:
Yang Wei (杨薇), Wu Yi-Yang (武翌阳), Liu Ning-Yang (刘宁炀), Liu Lei (刘磊), Chen Zhao (陈钊), Hu Xiao-Dong (胡晓东) Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters 2013 Chin. Phys. B 22 047801
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[1] |
Wu J, Walukiewicz W, Yu K M, Ager Iii J W, Haller E E, Lu H, Schaff W J, Saito Y and Nanishi Y 2002 Appl. Phys. Lett. 80 3967
|
[2] |
Takeuchi T, Wetzel C, Yamaguchi S, Sakai H, Amano H, Akasaki I, Kaneko Y, Nakagawa S, Yamaoka Y and Yamada N 1998 Appl. Phys. Lett. 73 1691
|
[3] |
Yoshikawa A, Che S B, Yamaguchi W, Saito H, Wang X Q, Ishitani Y and Hwang E S 2007 Appl. Phys. Lett. 90 073101
|
[4] |
Yoshikawa A, Che S, Ishitani Y and Wang X 2009 J. Cryst. Growth 311 2073
|
[5] |
Dimakis E, Nikiforov A Y, Thomidis C, Zhou L, Smith D J, Abell J, Kao C K and Moustakas T D 2008 Phys. Status Solidi (a) 205 1070
|
[6] |
Yuki A, Watanabe H, Che S B, Ishitani Y and Yoshikawa A 2009 Phys. Status Solidi (c) 6 S417
|
[7] |
Lin W, Li S and Kang J 2010 Appl. Phys. Lett. 96 101115
|
[8] |
APSYS Version 2008.06.01, Crosslight Software, Inc., 1995-2005
|
[9] |
Chuang S L and Chang C S 1997 Semicond. Sci. Technol. 12 252
|
[10] |
Bernardini F and Fiorentini V 2001 Phys. Rev. B 64 085207
|
[11] |
Vurgaftman I and Meyer J R 2003 J. Appl. Phys. 94 3675
|
[12] |
Wu J 2009 J. Appl. Phys. 106 011101
|
[13] |
Wu G G, Li W C, Shen C S, Gao F B, Liang H W, Wang H, Song L J and Du G T 2012 Appl. Phys. Lett. 100 103504
|
[14] |
Yeo Y, Chong T and Li M 1998 IEEE J. Quantum Electron. 34 1270
|
[15] |
Lu T P, Li S T, Zhang K, Liu C, Xiao G W, Zhou Y G, Zheng S W, Yin Y A, Wu L J, Wang H L and Yang X D 2011 Chin. Phys. B 20 108504
|
[16] |
Lu T P, Li S T, Zhang K, Liu C, Xiao G W, Zhou Y G, Zheng S W, Yin Y A, Wu L J, Wang H L and Yang X D 2011 Chin. Phys. B 20 098503
|
[17] |
Che S, Yuki A, Watanabe H, Ishitani Y and Yoshikawa A 2009 Appl. Phys. Express 2 021001
|
[18] |
Zhao H, Liu G and Tansu N 2010 Appl. Phys. Lett. 97 131114
|
[19] |
Yoshikawa A, Hashimoto N, Kikukawa N, Che S B and Ishitani Y 2005 Appl. Phys. Lett. 86 153115
|
[20] |
Ahn D, Chuang S L and Chang Y C 1988 J. Appl. Phys. 64 4056
|
[21] |
Nakamura S 1997 IEEE J. Sel. Top. Quantum Electron. 3 435
|
[22] |
Zhao H, Arif R, Ee Y K and Tansu N 2008 Opt. Quantum Electron. 40 301
|
[23] |
Yoshikawa A and Che S B 2008 Int. J. High Speed Electron. Syst. 18 993
|
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