InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm

doi:10.1088/1674-1056/21/2/028102

Abstract According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.

Keywords: quantum dot submonolayer self-assembled superluminescent diode

Received: 19 September 2011
Revised: 19 October 2011
Accepted manuscript online:

PACS:	81.07.Ta	(Quantum dots)
	81.16.Dn	(Self-assembly)
	85.35.Be	(Quantum well devices (quantum dots, quantum wires, etc.))
	85.60.Jb	(Light-emitting devices)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60876086, 60976057, and 60776037).

Corresponding Authors: Jin Peng,pengjin@semi.ac.cn
E-mail: pengjin@semi.ac.cn

Cite this article:

Li Xin-Kun(李新坤), Liang De-Chun(梁德春), Jin Peng(金鹏), An Qi(安琪), Wei Heng(魏恒), Wu Jian(吴剑), and Wang Zhan-Guo(王占国) InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm 2012 Chin. Phys. B 21 028102

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InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm

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