Review of gallium oxide based field-effect transistors and Schottky barrier diodes

doi:10.1088/1674-1056/28/1/017105

Abstract Gallium oxide (Ga₂O₃), a typical ultra wide bandgap semiconductor, with a bandgap of~4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices. Recently, a keen interest in employing Ga₂O₃ in power devices has been aroused. Many researches have verified that Ga₂O₃ is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors (FETs) and Schottky barrier diodes (SBDs) based on Ga₂O₃, which may provide a guideline for Ga₂O₃ to be preferably used in power devices fabrication.

Keywords: gallium oxide (Ga₂O₃) field-effect transistors (FETs) Schottky barrier diodes (SBDs)

Received: 13 August 2018
Revised: 04 November 2018
Accepted manuscript online:

PACS:	71.30.+h	(Metal-insulator transitions and other electronic transitions)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61774019, 51572033, and 51572241) and the Beijing Municipal Commission of Science and Technology, China (Grant No. SX2018-04).

Corresponding Authors: Pei-Gang Li, Wei-Hua Tang
E-mail: pgli@bupt.edu.cn;whtang@bupt.edu.cn

Cite this article:

Zeng Liu(刘增), Pei-Gang Li(李培刚), Yu-Song Zhi(支钰崧), Xiao-Long Wang(王小龙), Xu-Long Chu(褚旭龙), Wei-Hua Tang(唐为华) Review of gallium oxide based field-effect transistors and Schottky barrier diodes 2019 Chin. Phys. B 28 017105

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