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Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode |
| Yi-Dong Wang(王一栋), Jun Chen(陈俊) |
| School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China |
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Abstract The capacitance-voltage (C-V) characteristic of the TiW/p-InP Schottky barrier diodes (SBDs) is analyzed considering the effects of the interface state (Nss), series resistance (Rs), and deep level defects. The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect. The fitting coefficients α and β are used to reflect the Nss and Rs on the C-V characteristics, respectively. The α decreases with the increase of frequency, while β increases with the increase of frequency. The capacitance increases with the increase of α and the decrease of β. From our model, the peak capacitance and its position can be estimated. The experimental value is found to be larger than the calculated one at the lower voltage. This phenomenon can be explained by the effect of deep level defects.
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Received: 21 April 2018
Revised: 30 June 2018
Accepted manuscript online:
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PACS:
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72.80.Ey
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(III-V and II-VI semiconductors)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.61.Ey
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(III-V semiconductors)
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78.20.Bh
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(Theory, models, and numerical simulation)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61774108) and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China. |
Corresponding Authors:
Jun Chen
E-mail: junchen@suda.edu.cn
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Cite this article:
Yi-Dong Wang(王一栋), Jun Chen(陈俊) Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode 2018 Chin. Phys. B 27 097203
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