Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer

doi:10.1088/1674-1056/25/10/107302

Abstract

In this letter, the Ta/HfO_x/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each. The reset current is reduced for the HfO_x/BN bilayer device compared with that for the Ta/HfO_x/TiN structure. Furthermore, the reset current decreases with increasing BN thickness. The HfO_x layer is a dominating switching layer, while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode. The current conduction mechanism of low resistance state in the HfO_x/BN bilayer device is space-charge-limited current (SCLC), while it is Ohmic conduction in the HfO_x device.

Keywords: resistive random access memory (RRAM) low-power consumption uniformity HfO_x

Received: 06 May 2016
Revised: 22 June 2016
Accepted manuscript online:

PACS:	73.40.Rw	(Metal-insulator-metal structures)
	85.30.-z	(Semiconductor devices)
	85.35.-p	(Nanoelectronic devices)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61274113, 11204212, 61404091, 51502203, and 51502204), the Tianjin Natural Science Foundation, China (Grant Nos. 14JCZDJC31500 and 14JCQNJC00800), and the Tianjin Science and Technology Developmental Funds of Universities and Colleges, China (Grant No. 20130701).

Corresponding Authors: Fang Wang, Kai-Liang Zhang
E-mail: fwang75@163.com;kailiang_zhang@163.com

Cite this article:

Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮) Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer 2016 Chin. Phys. B 25 107302

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Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer

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Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer