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Chin. Phys. B, 2018, Vol. 27(6): 068801    DOI: 10.1088/1674-1056/27/6/068801

Detection of finger interruptions in silicon solar cells using photoluminescence imaging

Lei Zhang(张磊), Peng Liang(梁鹏), Hui-Shi Zhu(朱慧时), Pei-De Han(韩培德)
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 101407, China

Since publication, it has been brought to the attention of the Editorial Office of Chinese Physics B that parts of this paper showed strong similarities to the following article (including one equation, some analyses, the motivation and the conclusion) without citation: “Detection of Finger Interruptions in Silicon Solar Cells Using Line Scan Photoluminescence Imaging,” IEEE Journal of Photovoltaics, 2017, vol. 7, No. 6, pp. 1496-1502. Following our investigation, this article has been retracted by the Editorial Office of Chinese Physics B.

Finger interruptions are common problems in screen printed solar cells, resulting in poor performance in efficiency because of high effective series resistance. Electroluminescence (EL) imaging is typically used to identify interrupted fingers. In this paper, we demonstrate an alternative method based on photoluminescence (PL) imaging to identify local series resistance defects, with a particular focus on finger interruptions. Ability to detect finger interruptions by using PL imaging under current extraction is analyzed and verified. The influences of external bias control and illumination intensity on PL images are then studied in detail. Finally, in comparison with EL imaging, the using of PL imaging to identify finger interruptions possesses the prominent advantages:in PL images, regions affected by interrupted fingers show higher luminescence intensity, while regions affected by recombination defects show lower luminescence intensity. This inverse signal contrast allows PL imaging to more accurately identify the defect types.

Keywords:  silicon solar cells      luminescence      defects      series resistance  
Received:  26 December 2017      Revised:  09 April 2018      Accepted manuscript online: 
PACS:  88.40.jj (Silicon solar cells)  
  78.55.-m (Photoluminescence, properties and materials)  

Project supported by the National Natural Science Foundation of China (Grant Nos.61504139 and 61275040) and the Fund from the Chinese Academy of Sciences (Grant No.Y072051002).

Corresponding Authors:  Lei Zhang, Pei-De Han     E-mail:;

Cite this article: 

Lei Zhang(张磊), Peng Liang(梁鹏), Hui-Shi Zhu(朱慧时), Pei-De Han(韩培德) Detection of finger interruptions in silicon solar cells using photoluminescence imaging 2018 Chin. Phys. B 27 068801

[1] Trupke T, Pink E, Bardos R A and Abbott M D 2007 Appl. Phys. Lett. 90 093506
[2] Xiao Y P, Gao C, Wang T and Zhou L 2017 Acta Phys. Sin. 66 158801 (in Chinese)
[3] R De Rose, Malomo A, Magnone P, Crupi F, Cellere G, Martire M, Tonini D and Sangiorgi E 2012 Microelectronics Reliability 52 2500
[4] Hadi B, Mohammad A K and and Shahramm M 2017 Chin. Phys. B 26 108801
[5] Chaturvedi P, Hoex B and Walsh T M 2013 Sol. Energy Mater. Sol. Cells 108 78
[6] Fuyuki T, Kondo H, Yamazaki T, Takahashi Y and Uraoka Y 2005 Appl. Phys. Lett. 86 262108
[7] Höffler H, Haunschild J and Rein S 2016 Sol. Energy Mater. Sol. Cells 152 180
[8] Wuürfel P, Trupke T, Puzzer T, Schaäffer E, Warta W and Glunz S W 2007 J. Appl. Phys. 101 123110
[9] Giesecke J A, Kasemann M and Warta W 2009 J. Appl. Phys. 106 014907
[10] Glatthaar M, Haunschild J, Kasemann M, Giesecke J, Warta W and Rein S 2010 Phys. Status Solidi-R 4 13
[11] Hinken D, Ramspeck K, Bothe K, Fischer B and Brendel R 2007 Appl. Phys. Lett. 91 182104
[12] Höffler H, Al-Mohtaseb H, Haunschild J, Michl B and Kasemann M 2014 J. Appl. Phys. 115 034508
[13] Kampwerth H, Trupke T, Weber J W and Augarten Y 2008 Appl. Phys. Lett. 93 202102
[14] Padilla M, Reichel C, Hagedorn N, Fell A, Keding R, Michl B, Kasemann M, Warta W and Schubert M C 2016 Prog. Photovolt. Res. Appl. 24 326
[15] Shen C, Kampwerth H and Green M A 2014 Sol. Energy Mater. Sol. Cells 130 393
[16] Shen C, Wang K and Green M A 2014 Sol. Energy Mater. Sol. Cells 128 260
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