Hot carrier injection degradation under dynamic stress

doi:10.1088/1674-1056/20/3/037305

Abstract In this paper, we have studied hot carrier injection (HCI) under alternant stress. Under different stress modes, different degradations are obtained from the experiment results. The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A (DC stress with electron injection), the degradation keeps increasing. In the stress modes B (DC stress and then stress with the smallest gate injection) and C (DC stress and then stress with hole injection under V_g=0 V and V_g=1.8 V), recovery appears in the second stress period. And in the stress mode D (DC stress and then stress with hole injection under V_g=-1.8 V and V_d=1.8 V), as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained.

Keywords: hot carrier injection alternate stress recovery degradation

Received: 20 August 2010
Revised: 13 November 2010
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), the grant from the Major State Basic Research Development Program of China (973 Program, No. 2011CB309606), and the Fundamental Research Funds for the Central Universities (Grant No. JY10000904009).

Cite this article:

Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Hao Yue(郝跃), and Zhang Yue(张月) Hot carrier injection degradation under dynamic stress 2011 Chin. Phys. B 20 037305

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