The equilibrium composition in GexSi1-x/Si self-assembled alloy quantum dot

doi:10.1088/1674-1056/19/8/086801

Abstract The equilibrium composition in strained quantum dot is the result of both elastic relaxation and chemical mixing effects, which have a direct relationship to the optical and electronic properties of the quantum-dot-based device. Using the method of moving asymptotes and finite element tools, an efficient technique has been developed to compute the composition profile by minimising the Gibbs free energy in self-assembled alloy quantum dot. In this paper, the composition of dome-shaped Ge_xSi_1-x/Si quantum dot is optimised, and the contribution of the different energy to equilibrium composition is discussed. The effect of composition on the critical size for shape transition of pyramid-shaped GeSi quantum dot is also studied.

Keywords: equilibrium composition quantum dot method of moving asymptotes

Received: 13 November 2009
Revised: 09 March 2010
Accepted manuscript online:

PACS:	73.21.La	(Quantum dots)
	62.20.D-	(Elasticity)
	65.80.+n
	78.67.Hc	(Quantum dots)
	81.16.Dn	(Self-assembly)
	81.40.Jj	(Elasticity and anelasticity, stress-strain relations)

Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2009AA03Z405), the National Natural Science Foundation of China (Grant Nos. 60908028, 60971068, 10979065, and 10947150) and the High School Innovation and Introducing Talent Project of China (Grant No. B07005).

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Wang Dong-Lin(王东林), Yu Zhong-Yuan(俞重远), Liu Yu-Min (刘玉敏), Ye Han(叶寒), Lu Peng-Fei(芦鹏飞), Zhao Long(赵龙), and Guo Xiao-Tao(郭晓涛) The equilibrium composition in Ge_xSi_1-x/Si self-assembled alloy quantum dot 2010 Chin. Phys. B 19 086801

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The equilibrium composition in Ge_xSi_1-x/Si self-assembled alloy quantum dot