Ohmic contacts of 4H-SiC on ion-implantation layers
Wang Shou-Guo(王守国)a)c)†, Zhang Yan(张岩)a), Zhang Yi-Men(张义门)b), and Zhang Yu-Ming(张玉明) b)
a Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China; b School of Microelectronics, Xidian University, Xi'an 710071, China;; c School of Information Science and Technology, Northwest University, Xi'an 710127, China
Abstract The ohmic contacts of 4H-SiC are fabricated on nitrogen ion implanted layers made by performing box-like-profile implantation three and four times. Implantation parameters such as the standard deviation σ and the projection range Rp are calculated by the Monte Carlo simulator TRIM. Ni/Cr ohmic contacts on Si-face 4H-SiC implantation layers are measured by transfer length methods (TLMs). The results show that the values of sheet resistance Rsh are 30 kΩ /□ and 4.9 kΩ/□ and the values of specific contact resistance of ohmic contacts are 7.1× 10-4 Ωcm2 and 9.5 × 10-5Ω cm2 for the implanted layers with implantation performed three and four times respectively.
Wang Shou-Guo(王守国), Zhang Yan(张岩), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) Ohmic contacts of 4H-SiC on ion-implantation layers 2010 Chin. Phys. B 19 017204
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