| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Ohmic contacts of 4H-SiC on ion-implantation layers |
| Wang Shou-Guo(王守国)a)c)†, Zhang Yan(张岩)a), Zhang Yi-Men(张义门)b), and Zhang Yu-Ming(张玉明) b) |
| a Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China; b School of Microelectronics, Xidian University, Xi'an 710071, China;; c School of Information Science and Technology, Northwest University, Xi'an 710127, China |
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Abstract The ohmic contacts of 4H-SiC are fabricated on nitrogen ion implanted layers made by performing box-like-profile implantation three and four times. Implantation parameters such as the standard deviation σ and the projection range Rp are calculated by the Monte Carlo simulator TRIM. Ni/Cr ohmic contacts on Si-face 4H-SiC implantation layers are measured by transfer length methods (TLMs). The results show that the values of sheet resistance Rsh are 30 kΩ /□ and 4.9 kΩ/□ and the values of specific contact resistance $\rho_{\rm c}$ of ohmic contacts are 7.1× 10-4 Ω$\cdot$cm2 and 9.5 × 10-5Ω $\cdot$ cm2 for the implanted layers with implantation performed three and four times respectively.
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Received: 03 April 2009
Revised: 18 May 2009
Accepted manuscript online:
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PACS:
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73.40.Ns
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(Metal-nonmetal contacts)
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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73.40.Cg
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(Contact resistance, contact potential)
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73.61.Le
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(Other inorganic semiconductors)
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Cite this article:
Wang Shou-Guo(王守国), Zhang Yan(张岩), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) Ohmic contacts of 4H-SiC on ion-implantation layers 2010 Chin. Phys. B 19 017204
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| [1] |
Ostling M, Lee H S, Domeij M and Zetterling C M 2006 Int. Conf. in Mixed Design p34
|
| [2] |
Funaki T, Kashyap A S, Mantooth H A and Balda J C 2006 37th IEEE Power Electronics Specialist Conference p1384
|
| [3] |
Treu M, Rupp R, Blaschitz P and Hilsenbeck J 2006 Superlattices and Microstructures 40 380
|
| [4] |
Ostling M, Koo S M, Lee S K and Danielsson E 2002 Proc. 23rd Int. Conf. on Microelectronics p31
|
| [5] |
Davis R F and Kelner G 1991 Proc. IEEE 79 677
|
| [6] |
Seshadri S, Eldridge G W and Agarwal A K 1998 Appl. Phys. Lett. 72 2026
|
| [7] |
Handy E M and Rao M V 1999 J. Appl. Phys. 86 746
|
| [8] |
Kimoto T, Takemura O and Matsunami H 1998 J. Electron. Mater. 27 358
|
| [9] |
Capano M A, Ryu S and Melloch M R 1998 J. Electron. Mater. 27 370
|
| [10] |
Khemka V, Patel R and Ramungul N 1999 J. Electron. Mater. 28 167
|
| [11] |
Ruggiero A, Libertino S and Roccaforte F 2006 Applied Physics A-Materials Science & Processing 543
|
| [12] |
Lulli G, Albertazzi E, Bianconi M and Nipoti R 2001 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148 573
|
| [13] |
Posselt M, Schmidt B and Murthy C S 1997 J. Electrochem. Soc. 144 1496
|
| [14] |
Hoon J N, Jeong H M and Jeong H Y 2006 Microelectronic Engineering 83 160
|
| [15] |
Sankin V I, Shkrebiy P P and Kuznetsov A N 2001 Proceeding on Silicon Carbide and Related Materials PTS 1 and 2 1407
|
| [16] |
Hallin C, Yakimova R and Pecz B 1997 J. Electron. Mater. 26 119
|
| [17] |
Downey B P, Flemish J R, Liu B Z, Clark T E and Mohney S E 2009 J. Electron. Mater. 38 563
|
| [18] |
Porter L M, Davis R F and Bow J S 1995 J. Mater. Res. 10 26
|
| [19] |
Zhang J, Howe R T and Maboudian R 2007 Mat. Sci. Eng. B 139 235
|
| [20] |
Ohyanagi T, Onose Y and Watanabe A 2008 J. Vac. Sci. Tech. B 26 1359
|
| [21] |
Cao Y, Perez-Garcia S A and Nyborg L 2007 Appl. Surf. Sci. 254 139
|
| [22] |
Yang H, Peng T H, Wang W J, Zhang D F and Chen X L 2007 Appl. Surf. Sci. 254 527
|
| [23] |
Machac P, Barda B and Maixner J 2008 Appl. Surf. Sci. 254 1691
|
| [24] |
Jennings M R, Perez-Tomas A and Davies M 2007 Solid State Electronics 51 797
|
| [25] |
Chang S C, Wang S J and Uang K M 2005 Solid State Electronics 49 1937
|
| [26] |
Gao Y, Tang Y, Hoshi M and Chow T P 2000 Solid State Electronics 44 1875
|
| [27] |
Katulaka G and Roe K J 2002 J. Electron. Mater. 31 346
|
| [28] |
Zhao J H, Tone K and Weiner S R 1997 IEEE Electron Device Lett. 18 375
|
| [29] |
Tone K and Zhao J H 1999 IEEE Trans. Electron Device 46 612
|
| [30] |
Berger H H 1972 Solid State Electronics 15 145
|
| [31] |
Rao M V and Tucker J B 1999 J. Appl. Phys. 86 752
|
| [32] |
Ruppalt L B, Stafford S, Yuan D and Jones K A 2003 Solid State Electronics 47 253
|
| [33] |
Derenge M A, Jones K A, Kirchner K W and Ervin M H 2004 Solid State Electronics 48 1867
|
| [34] |
Porter L M and Davis R F 1995 Materials Science and Engineering 34 83
|
| [35] |
Padovani F A and Stratton R 1966 Solid State Electronics 9 695
|
| [36] |
Wang S G, Zhang Y M and Zhang Y M 2003 Chin. Phys. 12 94
|
| [37] |
Zhang Y M, Luo J S and Zhang Y M 1997 Chin. J. Semiconductors 18 718
|
| [38] |
Oder T N, Williams J R, Bozack M J and Iyer V 1998 J. Electron. Mater. 27 324
|
| [39] |
Vang H, Lazar M, Brosselard P and Raynaud C 2006 Superlattices and Microstructures 40 626
|
| [40] |
Wang S G, Zhang Y M and Zhang Y M 2003 Chin. Phys. 12 89
|
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