Raman scattering studies on manganese ion-implanted GaN
Xu Da-Qing(徐大庆)†, Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Li Pei-Xian(李培咸), and Wang Chao(王超)
Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract This paper reports that the Raman spectra have been recorded on the metal-organic chemical vapour deposition epitaxially grown GaN before and after the Mn ions implanted. Several Raman defect modes have emerged from the implanted samples. The structures around 182 cm-1 modes are attributed to the disorder-activated Raman scattering, whereas the 361 cm-1 and 660 cm-1 peaks are assigned to nitrogen vacancy-related defect scattering. One additional peak at 280 cm-1 is attributed to the vibrational mode of gallium vacancy-related defects and/or to disorder activated Raman scattering. A Raman-scattering study of lattice recovery is also presented by rapid thermal annealing at different temperatures between 700 °C and 1050 °C on Mn implanted GaN epilayers. The behaviour of peak-shape change and full width at half maximum (FWHM) of the A1(LO) (733 cm-1) and EH2 (566 cm-1) Raman modes are explained on the basis of implantation-induced lattice damage in GaN epilayers.
Received: 07 October 2008
Revised: 05 November 2008
Accepted manuscript online:
Fund: Project
supported by the National Natural Science Foundation of
China (Grant No 90407014).
Cite this article:
Xu Da-Qing(徐大庆), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Li Pei-Xian(李培咸), and Wang Chao(王超) Raman scattering studies on manganese ion-implanted GaN 2009 Chin. Phys. B 18 1637
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