Please wait a minute...
Chin. Phys. B, 2009, Vol. 18(2): 768-772    DOI: 10.1088/1674-1056/18/2/059
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition

Xu Gao-Bo(许高博) and Xu Qiu-Xia(徐秋霞)
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract  This paper presents a method using simple physical vapour deposition to form high-quality hafnium silicon oxynitride (HfSiON) on ultrathin SiO$_{2}$ buffer layer. The gate dielectric with 10 Å (1 Å = 0.1 nm) equivalent oxide thickness is obtained. The experimental results indicate that the prepared HfSiON gate dielectric exhibits good physical and electrical characteristics, including very good thermal stability up to 1000${^\circ}$C, excellent interface properties, high dielectric constant ($k=14$) and low gate-leakage current ($I_{\rm g}=1.9\times 10^{ - 3}$ A/cm$^{2} @V_{\rm g}=V_{\rm fb}-1$ V for EOT of 10 {\AA}). TaN metal gate electrode is integrated with the HfSiON gate dielectric.The effective work function of TaN on HfSiON is 4.3 eV, meeting the requirements of NMOS for the metal gate. And, the impacts of sputtering ambient and annealing temperature on the electrical properties of HfSiON gate dielectric are investigated.
Keywords:  HfSiON      high-k gate dielectric      sputtering      leakage current  
Received:  09 April 2008      Revised:  14 August 2008      Accepted manuscript online: 
PACS:  77.55.+f  
  77.22.Ch (Permittivity (dielectric function))  
  81.15.Cd (Deposition by sputtering)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  73.40.-c (Electronic transport in interface structures)  
  81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)  
Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No 2006CB302704) and the National Natural Science Foundation of China (Grant No 60776030).

Cite this article: 

Xu Gao-Bo(许高博) and Xu Qiu-Xia(徐秋霞) Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition 2009 Chin. Phys. B 18 768

[1] Effects of preparation parameters on growth and properties of β-Ga2O3 film
Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
[2] Sub-stochiometric MoOx by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells
Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付). Chin. Phys. B, 2022, 31(9): 098401.
[3] Ru thickness-dependent interlayer coupling and ultrahigh FMR frequency in FeCoB/Ru/FeCoB sandwich trilayers
Le Wang(王乐), Zhao-Xuan Jing(荆照轩), Ao-Ran Zhou(周傲然), and Shan-Dong Li(李山东). Chin. Phys. B, 2022, 31(8): 086201.
[4] Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering
Min Huang(黄敏), Yan-Song Liu(刘艳松), Zhi-Bing He(何智兵), and Yong Yi(易勇). Chin. Phys. B, 2022, 31(6): 066101.
[5] Experimental investigation on divertor tungsten sputtering with neon seeding in ELMy H-mode plasma in EAST tokamak
Dawei Ye(叶大为), Fang Ding(丁芳), Kedong Li(李克栋), Zhenhua Hu(胡振华), Ling Zhang(张凌), Xiahua Chen(陈夏华), Qing Zhang(张青), Pingan Zhao(赵平安), Tao He(贺涛), Lingyi Meng(孟令义), Kaixuan Ye(叶凯萱), Fubin Zhong(钟富彬), Yanmin Duan(段艳敏), Rui Ding(丁锐), Liang Wang(王亮), Guosheng Xu(徐国盛), Guangnan Luo(罗广南), and EAST team. Chin. Phys. B, 2022, 31(6): 065201.
[6] The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy
Shuyao Chen(陈姝瑶), Yunfei Xie(谢云飞), Yucong Yang(杨玉聪), Dong Gao(高栋), Donghua Liu(刘冬华), Lin Qin(秦林), Wei Yan(严巍), Bi Tan(谭碧), Qiuli Chen(陈秋丽), Tao Gong(龚涛), En Li(李恩), Lei Bi(毕磊), Tao Liu(刘涛), and Longjiang Deng(邓龙江). Chin. Phys. B, 2022, 31(4): 048503.
[7] Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films
Hang-Hang Wang(王行行), Wen-Qi Lu(陆文琪), Jiao Zhang(张娇), and Jun Xu(徐军). Chin. Phys. B, 2022, 31(4): 048103.
[8] Sputtered SnO2 as an interlayer for efficient semitransparent perovskite solar cells
Zheng Fang(方正), Liu Yang(杨柳), Yongbin Jin(靳永斌), Kaikai Liu(刘凯凯), Huiping Feng(酆辉平), Bingru Deng(邓冰如), Lingfang Zheng(郑玲芳), Changcai Cui(崔长彩), Chengbo Tian(田成波), Liqiang Xie(谢立强), Xipeng Xu(徐西鹏), and Zhanhua Wei(魏展画). Chin. Phys. B, 2022, 31(11): 118801.
[9] A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications
Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(11): 117105.
[10] Development of ZnTe film with high copper doping efficiency for solar cells
Xin-Lu Lin(林新璐), Wen-Xiong Zhao(赵文雄), Qiu-Chen Wu(吴秋晨), Yu-Feng Zhang(张玉峰), Hasitha Mahabaduge, and Xiang-Xin Liu(刘向鑫). Chin. Phys. B, 2022, 31(10): 108802.
[11] Effects of post-annealing on crystalline and transport properties of Bi2Te3 thin films
Qi-Xun Guo(郭奇勋), Zhong-Xu Ren(任中旭), Yi-Ya Huang(黄意雅), Zhi-Chao Zheng(郑志超), Xue-Min Wang(王学敏), Wei He(何为), Zhen-Dong Zhu(朱振东), and Jiao Teng(滕蛟). Chin. Phys. B, 2021, 30(6): 067307.
[12] Cathodic shift of onset potential on TiO2 nanorod arrays with significantly enhanced visible light photoactivity via nitrogen/cobalt co-implantation
Xianyin Song(宋先印), Hongtao Zhou(周洪涛), and Changzhong Jiang(蒋昌忠). Chin. Phys. B, 2021, 30(5): 058505.
[13] CdS/Si nanofilm heterojunctions based on amorphous silicon films: Fabrication, structures, and electrical properties
Yong Li(李勇), Peng-Fei Ji(姬鹏飞), Yue-Li Song(宋月丽), Feng-Qun Zhou(周丰群), Hong-Chun Huang(黄宏春), and Shu-Qing Yuan(袁书卿). Chin. Phys. B, 2021, 30(2): 026101.
[14] RF magnetron sputtering induced the perpendicular magnetic anisotropy modification in Pt/Co based multilayers
Runze Li(李润泽), Yucai Li(李予才), Yu Sheng(盛宇), and Kaiyou Wang(王开友). Chin. Phys. B, 2021, 30(2): 028506.
[15] Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass
Xia Wang(王霞), Wei-Fang Gu(古卫芳), Yong-Feng Qiao(乔永凤), Zhi-Yong Feng(冯志永), Yue-Hua An(安跃华), Shao-Hui Zhang(张少辉), and Zeng Liu(刘增). Chin. Phys. B, 2021, 30(11): 114211.
No Suggested Reading articles found!