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Chin. Phys. B, 2009, Vol. 18(10): 4536-4540    DOI: 10.1088/1674-1056/18/10/073
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effects of doping concentration on properties of Mn-doped ZnO thin films

Gao Li(高立) and Zhang Jian-Min(张建民)
College of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, China
Abstract  This paper reports that the radio frequency magnetron sputtering is used to fabricate ZnO and Mn-doped ZnO thin films on glass substrates at 500 °C. The Mn-doped ZnO thin films present wurtzite structure of ZnO and have a smoother surface, better conductivity but no ferromagnetism. The x-ray photoelectron spectroscopy results show that the binding energy of Mn2p3/2 increases with increasing Mn content slightly, and the state of Mn in the Mn-doped ZnO thin films is divalent. The chemisorbed oxygen in the Mn-doped ZnO thin films increases with increasing Mn doping concentration. The photoluminescence spectra of ZnO and Mn-doped ZnO thin films have a similar ultraviolet emission. The yellow green emissions of 4 wt.% and 10 wt.% Mn-doped thin films are quenched, whereas the yellow green emission occurs because of abundant oxygen vacancies in the Mn-doped ZnO thin films after 20 wt.% Mn doping. Compared with pure ZnO thin film, the bandgap of the Mn-doped ZnO thin films increases with increasing Mn content.
Keywords:  Mn-doped ZnO      radio frequency magnetron sputtering      x-ray photoelectron spectroscopy      photoluminescence  
Received:  03 March 2009      Revised:  26 March 2009      Accepted manuscript online: 
PACS:  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  61.72.uj (III-V and II-VI semiconductors)  
  78.55.Et (II-VI semiconductors)  
  78.66.Hf (II-VI semiconductors)  
  79.60.Dp (Adsorbed layers and thin films)  
  81.15.Cd (Deposition by sputtering)  
Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No 2004CB619302).

Cite this article: 

Gao Li(高立) and Zhang Jian-Min(张建民) Effects of doping concentration on properties of Mn-doped ZnO thin films 2009 Chin. Phys. B 18 4536

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