Preparation of p-type ZnO:(Al, N) by a combination of sol--gel and ion-implantation techniques
Xue Shu-Wen(薛书文)a)b)†, Zu Xiao-Tao(祖小涛)a), Shao Le-Xi(邵乐喜)b), Yuan Zhao-Lin(袁兆林)a), Xiang Xia(向霞)a), and Deng Hong(邓宏)c)
a Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; b Department of Physics, Zhanjiang Normal College, Zhanjiang 524048, China; c School of Microelectronics and Solid-state Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract We report the preparation of p-type ZnO thin films on (0001) sapphire substrates by a combination of sol--gel and ion-implantation techniques. The results of the Hall-effect measurements carried out at room temperature indicate that the N-implanted ZnO:Al films annealed at 600℃ have converted to p-type conduction with a hole concentration of 1.6$\times$1018cm-3, a hole mobility of 3.67cm2/V$\cdot$s and a minimum resistivity of 4.80cm$\cdot\Omega$. Ion-beam induced damage recovery has been investigated by x-ray diffraction (XRD), photoluminescence (PL) and optical transmittance measurements. Results show that diffraction peaks and PL intensities are decreased by N ion implantation, but they nearly recover after annealing at 600℃. Our results demonstrate a promising approach to fabricate p-type ZnO at a low cost.
Received: 22 October 2007
Revised: 10 December 2007
Accepted manuscript online:
PACS:
81.15.-z
(Methods of deposition of films and coatings; film growth and epitaxy)
Fund: Project supported by the Program
for New Century Excellent Talents in University (Grant No
NCET-04-0899) and Special Foundation for University Subject
Construction, Department of Education of Guangdong Province, China
(Grant No [2006] 11).
Cite this article:
Xue Shu-Wen(薛书文), Zu Xiao-Tao(祖小涛), Shao Le-Xi(邵乐喜), Yuan Zhao-Lin(袁兆林), Xiang Xia(向霞), and Deng Hong(邓宏) Preparation of p-type ZnO:(Al, N) by a combination of sol--gel and ion-implantation techniques 2008 Chin. Phys. B 17 2240
Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation Lijie Huang(黄黎杰), Lin Li(李琳), Zhen Shang(尚震), Mao Wang(王茂), Junjie Kang(康俊杰), Wei Luo(罗巍), Zhiwen Liang(梁智文), Slawomir Prucnal, Ulrich Kentsch, Yanda Ji(吉彦达), Fabi Zhang(张法碧), Qi Wang(王琦), Ye Yuan(袁冶), Qian Sun(孙钱), Shengqiang Zhou(周生强), and Xinqiang Wang(王新强). Chin. Phys. B, 2021, 30(5): 056104.
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