Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes on quantum well widths
Zhang Yang (张杨)a, Zhang Yu (张予)b, Zeng Yi-Ping (曾一平)a
a Novel Materials laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b The Internship Center for Business and Law, Beijing Technology and Business University, Beijing 102488, China
Abstract This paper studies the dependence of I-V characteristics on quantum well widths in AlAs/In0.53Ga0.47As and AlAs/In0.53Ga0.47As/InAs resonant tunneling structures grown on InP substrates. It shows that the peak and the valley current density in the negative differential resistance region are closely related with quantum well width. The measured peak current density, valley current densities and peak-to-valley current ratio of resonant tunneling diodes are continually decreasing with increasing well width.
Received: 13 March 2008
Revised: 28 April 2008
Accepted manuscript online:
PACS:
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
(Quantum well devices (quantum dots, quantum wires, etc.))
Cite this article:
Zhang Yang (张杨), Zhang Yu (张予), Zeng Yi-Ping (曾一平) Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes on quantum well widths 2008 Chin. Phys. B 17 4645
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