Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films
Xue Shu-Wen(薛书文)a)b), Zu Xiao-Tao(祖小涛)a)† Su Hai-Qiao(苏海桥)a), Zheng Wan-Guo(郑万国)c), Xiang Xia(向霞)a), Deng Hong(邓宏)d), and Yang Chun-Rong(杨春容)d)
a Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; b Department of Physics, Zhanjiang Normal College, Zhanjiang 524048, China; c Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China; d School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract This paper reports that ion implantation to a dose of 1×1017 ions/cm2 was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600-900℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction (XRD), photoluminescence (PL). It was found that the intensities of (002) peak and near band edge (NBE) exitonic ultraviolet emission increased with increasing annealing temperature from 600-900℃. The defect related deep level emission (DLE) firstly increased with increasing annealing temperature from 600-750℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at $\sim$ 850℃ and $\sim$750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600-900℃.
Received: 19 August 2006
Revised: 15 September 2006
Accepted manuscript online:
PACS:
68.55.Ln
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
Fund: Project supported by the Program for New Century Excellent
Talents in University (Grant No~NCET-04-0899), the Ph.D.
Funding Support Program of
Education Ministry of China (Grant No~20050614013), and the NSAF Joint Foundation of
China (Grant No~10376006).
Cite this article:
Xue Shu-Wen(薛书文), Zu Xiao-Tao(祖小涛) Su Hai-Qiao(苏海桥), Zheng Wan-Guo(郑万国), Xiang Xia(向霞), Deng Hong(邓宏), and Yang Chun-Rong(杨春容) Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films 2007 Chinese Physics 16 1119
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