Abstract Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency (RF) magnetron sputtering at room temperature. The RF power is varied from 75 to 150W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power. The lowest resistivity achieved is 2.07×10-3$\Omega$cm at an RF power of 100W with a Hall mobility of 16cm2V-1s-1 and a carrier concentration of 1.95×1020cm-3. The films obtained are polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33eV for the films deposited at different RF powers.
Received: 10 November 2005
Revised: 24 August 2006
Accepted manuscript online:
Fund: Project supported by the National Key Basic Research and Development Programme of China (Grant No 2001CB610504) and the National Natural Science Foundation of China (Grant Nos 60576039 and 10374060).
Cite this article:
Lü Mao-Shui(吕茂水), Pang Zhi-Yong(庞智勇), Xiu Xian-Wu(修显武), Dai Ying(戴瑛), and Han Sheng-Hao(韩圣浩) Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering 2007 Chinese Physics 16 548
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