Abstract Ultra-thin HfO2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO2 target and subsequently annealed at different temperatures and atmospheres. We have studied the capacitance-voltage, current-voltage, and breakdown characteristics of the gate dielectrics. The results show that electrical characteristics of HfO2 gate dielectric are related to the annealing temperature. With increase annealing temperature, the largest value of capacitance decreases, the equivalent oxide thickness increases, the leakage current reduces, and the breakdown voltage decreases.
Received: 24 January 2002
Revised: 21 November 2002
Accepted manuscript online:
Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No G20000365).
Cite this article:
Han De-Dong (韩德栋), Kang Jin-Feng (康晋锋), Lin Chang-Hai (林长海), Han Ru-Qi (韩汝琦) Annealing characteristics of ultra-thin high-K HfO2 gate dielectrics 2003 Chinese Physics 12 325
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