ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE FROM STRAINED SiGe/Si QUANTUM WELL

doi:10.1088/1004-423X/5/6/007

Abstract

Abstract Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by molecular beam epitaxy is reported. The SiGe/Si step-graded index quantum well structure is beneficial to the enhancing of electro-luminescence. The optical and electrical properties of this structure are discussed.

Received: 18 March 1995
Revised: 03 January 1996
Accepted manuscript online:

PACS:	78.60.Fi	(Electroluminescence)
	78.55.Hx	(Other solid inorganic materials)
	73.61.Le	(Other inorganic semiconductors)
	78.67.De	(Quantum wells)
	73.63.Hs	(Quantum wells)
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)

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DONG WEN-FU (董文甫), YANG QIN-QING (杨沁清), LI JIAN (黎建), WANG QI-MING (王启明), CHUI QIAN (崔堑), ZHOU JUN-MING (周钧铭), HUANG QI (黄绮) ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE FROM STRAINED SiGe/Si QUANTUM WELL 1996 Acta Physica Sinica (Overseas Edition) 5 456

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ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE FROM STRAINED SiGe/Si QUANTUM WELL

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