Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC

doi:10.1088/1674-1056/ab3e44

Abstract Si p⁺n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.

Keywords: silicon light-emitting diode reverse bias electro-optic modulation

Received: 30 June 2019
Revised: 24 August 2019
Accepted manuscript online:

PACS:	78.60.Fi	(Electroluminescence)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61704019).

Corresponding Authors: Kaikai Xu
E-mail: kaikaix@uestc.edu.cn

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Yanxu Chen(陈彦旭), Dongliang Xu(许栋梁), Kaikai Xu(徐开凯), Ning Zhang(张宁), Siyang Liu(刘斯扬), Jianming Zhao(赵建明), Qian Luo(罗谦), Lukas W. Snyman, Jacobus W. Swart Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC 2019 Chin. Phys. B 28 107801

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Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC

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