ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE FROM STRAINED SiGe/Si QUANTUM WELL
DONG WEN-FU (董文甫)a, YANG QIN-QING (杨沁清)a, LI JIAN (黎建)a, WANG QI-MING (王启明)a, CHUI QIAN (崔堑)b, ZHOU JUN-MING (周钧铭)b, HUANG QI (黄绮)b
a National Integrated Opto-electronics Laboratory, Institute of Semiconductors, Academia Sinica, Beijing 100083, China; b Institute of Physics, Academia Sinica, Beijing 100080, China
Abstract Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by molecular beam epitaxy is reported. The SiGe/Si step-graded index quantum well structure is beneficial to the enhancing of electro-luminescence. The optical and electrical properties of this structure are discussed.
Received: 18 March 1995
Revised: 03 January 1996
Accepted manuscript online:
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