FI-STM STUDY OF HYDROGEN ADSORPTION ON Si(100) SURFACE
LU HUA (陆华), WANG XIANG-DONG (王向东)a, K.MOTAIb, T.HASHIZUMEb, T.SAKURAIb
Laboratory for Surface Physics, Academia Sinica Beijing 100080, China; aLaboratory for Surface Physics, Fudan University, Shanghai 200433, China; bInstitute for Materials Research, Tohoku University Aoba-ku, Sendai 980, Japan
Abstract Chemisorption of atomic hydrogen on the Si(100)2×1 surface has been investigated in detail by using a field ion-scanning tunneling microscope (FI-STM). The results showed that the adsorption geometry changed from the 2×1 monohydride phase to the 1×1 dihydride phase with increasing exposure of hydrogen. The data of desorption of the hydrogen-saturated Si surface showed that on annealing at 670K the surface becomes highly disordered: the 1×1 dihydride structure is eliminated and the 2×1 reconstructed monohydride is also hardly to identify. When the temperature rises to as high as 730 K, the surface is domi-nated by the 2×1 structure with missing dimer rows, and some adatom chains occur on the Si substrate ler-races. We attribute the formation of these atomic chains to an epitaxial growth of Si atoms which are formed by the dissociation of SiHx (x= 1, 2, 3 or 4) compounds on the Si surface.
Received: 29 January 1992
Accepted manuscript online:
LU HUA (陆华), WANG XIANG-DONG (王向东), K.MOTAI, T.HASHIZUME, T.SAKURAI FI-STM STUDY OF HYDROGEN ADSORPTION ON Si(100) SURFACE 1992 Acta Physica Sinica (Overseas Edition) 1 191
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