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Superconductivity in bulk 2H-MoS2 via carrier doping |
| Mingshu Tan(谭明蜀)1, Helin Mei(梅贺林)1, Keyi Li(李可意)1,2, Wei Ren(任玮)1, Xueying Ma(马雪英)1, Shaoshuai Hou(侯少帅), Feng Jin(金峰)2,†, Anmin Zhang(张安民)1,‡, and Qingming Zhang(张清明)2,1 |
1 School of Physical Science and Technology, Key Laboratory of Quantum Theory and Applications of MoE, Lanzhou University, Lanzhou 730000, China;
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract As a prototypical transition metal dichalcogenide (TMD) semiconductor, MoS$_{2}$ exhibits diverse tunable electronic properties in low-dimensional systems, such as Ising superconductivity and charge density waves (CDWs). However, the intrinsic superconductivity of bulk MoS$_{2}$ remains underexplored. Here, we demonstrate carrier doping in bulk 2H-MoS$_2$ using an ionic-liquid-gating method, resulting in anisotropic bulk superconductivity with a critical temperature $T_{\rm c}$ of 3.2 K. Notably, the superconducting transition in the bulk requires the lowest critical carrier density ($\sim 10^{13}$ cm$^{-2}$) among all the reported superconducting MoS$_{2}$ systems, while exhibiting a higher $T_{\rm c}$ than typically observed in monolayers. The electron-phonon coupling (EPC) constant extracted from Raman spectroscopy yields a calculated $T_{\rm c}$ consistent with the experimental observations, in agreement with the mechanism established in monolayer MoS$_{2}$. We attribute these observations to the Fermi level preferentially crossing the lower-energy $Q$ point in the bulk, which facilitates superconducting pairing. The results provide deeper insights into the superconducting mechanism in bulk 2H-MoS$_{2}$.
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Received: 11 December 2025
Revised: 05 January 2026
Accepted manuscript online: 23 January 2026
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PACS:
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74.70.Xa
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(Pnictides and chalcogenides)
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74.62.Dh
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(Effects of crystal defects, doping and substitution)
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74.25.nd
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(Raman and optical spectroscopy)
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74.25.Kc
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(Phonons)
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| Fund: This work was supported by the National Key Research and Development Program of China (Grant Nos. 2024YFA1408300 and 2022YFA1402704), the National Science Foundation of China (Grant No. 12274186), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB33010100), and the Synergetic Extreme Condition User Facility (SECUF, https://cstr.cn/31123.02.SECUF). |
Corresponding Authors:
Feng Jin,E-mail:jinfeng@iphy.ac.cn;Anmin Zhang,E-mail:amzhang@lzu.edu.cn
E-mail: jinfeng@iphy.ac.cn;amzhang@lzu.edu.cn
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Cite this article:
Mingshu Tan(谭明蜀), Helin Mei(梅贺林), Keyi Li(李可意), Wei Ren(任玮), Xueying Ma(马雪英), Shaoshuai Hou(侯少帅), Feng Jin(金峰), Anmin Zhang(张安民), and Qingming Zhang(张清明) Superconductivity in bulk 2H-MoS2 via carrier doping 2026 Chin. Phys. B 35 057403
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