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Chin. Phys. B, 2025, Vol. 34(4): 046102    DOI: 10.1088/1674-1056/adb272
Special Issue: SPECIAL TOPIC — Structures and properties of materials under high pressure
SPECIAL TOPIC — Structures and properties of materials under high pressure Prev   Next  

Well defined phase boundaries and superconductivity with high Tc in PbSe single crystal

Jiawei Hu(胡佳玮)1,2,3,†, Yanghao Meng(孟养浩)3,4,†, He Zhang(张赫)3,4, Wei Zhong(钟韦)5, Hang Zhai(翟航)3,6, Xiaohui Yu(于晓辉)3,4,7,‡, Binbin Yue(岳彬彬)5,§, and Fang Hong(洪芳)3,4,7,¶
1 Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China;
2 University of Science and Technology of China, Hefei 230026, China;
3 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
4 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 10019, China;
5 Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China;
6 State Key Laboratory of Superhard Materials, International Center for Computational Method and Software, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun 130012, China;
7 Songshan Lake Materials Laboratory, Dongguan 523808, China
Abstract  Lead chalcogenides represent a significant class of materials that exhibit intriguing physical phenomena, including remarkable thermoelectric properties and superconductivity. In this study, we present a comprehensive investigation on the superconductivity of PbSe single crystal under high pressure. The signature of superconducting (SC) transition starts to appear at 7.2 K under 16.5 GPa. Upon further compression, the SC temperature ($T_{\rm c}$) decreases, and it is reduced to 3.5 K at 45.0 GPa. The negative pressure dependent behavior of $T_{\rm c}$ is consistent with the trend of $T_{\rm c}$-$P$ relations observed in other lead chalcogenides. The highest $T_{\rm c}$ is 8.0 K observed at 20.5 GPa during decompression process, which is also the highest record among all other PbSe derivatives, such as doped samples, superlattices, and so on. The phase boundaries of the structural and electronic transitions are well defined by Raman spectroscopy, and then phase diagrams are plotted for both compression and decompression processes. This work corrects the previous claim of positive pressure dependence of $T_{\rm c}$ in PbSe and provides clear phase diagrams for intrinsic superconductivity in PbSe under pressure.
Keywords:  superconductivity      high-pressure electrical transport      Raman spectroscopy      phase diagrams  
Received:  10 January 2025      Revised:  03 February 2025      Accepted manuscript online:  05 February 2025
PACS:  61.50.Ks (Crystallographic aspects of phase transformations; pressure effects)  
  74.62.Fj (Effects of pressure)  
  73.61.-r (Electrical properties of specific thin films)  
  74.25.nd (Raman and optical spectroscopy)  
  74.25.Dw (Superconductivity phase diagrams)  
Fund: This work was supported by the National Natural Science Foundation of China (Grant Nos. 12374050, 12004014, U1930401, and 12375304), the National Key R&D Program of China (Grant Nos. 2021YFA1400300 and 2023YFA1608900), and the Major Program of the National Natural Science Foundation of China (Grant No. 22090041).
Corresponding Authors:  Xiaohui Yu, Binbin Yue, Fang Hong     E-mail:  ;yuxh@iphy.ac.cn;yuebb@hpstar.ac.cn;hongfang@iphy.ac.cn

Cite this article: 

Jiawei Hu(胡佳玮), Yanghao Meng(孟养浩), He Zhang(张赫), Wei Zhong(钟韦), Hang Zhai(翟航), Xiaohui Yu(于晓辉), Binbin Yue(岳彬彬), and Fang Hong(洪芳) Well defined phase boundaries and superconductivity with high Tc in PbSe single crystal 2025 Chin. Phys. B 34 046102

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