Stokes/anti-Stokes Raman spectroscopy of Al0.86Ga0.14N semiconductor alloy
Yuru Lin(林玉茹)1, Yu Li(李宇)1, Binbin Wu(吴彬彬)1, Jingyi Liu(刘静仪)1, Ruiang Guo(郭睿昂)1, Yangbin Wang(王扬斌)1, Qiwei Hu(胡启威)2,‡, and Li Lei(雷力)1,†
1 Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China; 2 School of Physics and Electronic Engineering, Sichuan University of Science and Engineering, Zigong 643000, China
Abstract The lattice dynamics of a high Al composition semiconductor alloy, AlGaN, in comparison with intrinsic GaN and AlN are studied by Stokes/anti-Stokes Raman spectroscopy in the temperature range of 85-823 K. The phonon anharmonic effect in AlGaN is found to be stronger than that in GaN, revealing low thermal conductivity in the semiconductor alloy. Multi-phonon coupling behavior is analyzed by both Stokes Raman and anti-Stokes Raman spectroscopy. It is interesting to find that the anti-Stokes scattering exhibits stronger three-phonon coupling than the Stokes scattering, which may be due to the fact that the anti-stokes scattering process is generated from an excited state and the scattered photons have higher energies. The Stokes/anti-Stokes temperature correction factor for Raman modes in AlGaN alloy are all smaller than those of the corresponding intrinsic modes in GaN and AlN. The reasons for the difference in can be attributed to three aspects, including the equipment setups, materials properties (the binding energy) and the coupling strength of Raman scattering and the sample.
Fund: The authors thank Prof. Filippo S. Boi for the helpful discussion. Project supported by the National Natural Science Foundation of China (Grant No. 12374013) and the Fundamental Research Funds for the Central Universities (Grant No. 2020SCUNL107).
Corresponding Authors:
Li Lei, Qiwei Hu
E-mail: lei@scu.edu.cn;hqw920861@163.com
Cite this article:
Yuru Lin(林玉茹), Yu Li(李宇), Binbin Wu(吴彬彬), Jingyi Liu(刘静仪), Ruiang Guo(郭睿昂), Yangbin Wang(王扬斌), Qiwei Hu(胡启威), and Li Lei(雷力) Stokes/anti-Stokes Raman spectroscopy of Al0.86Ga0.14N semiconductor alloy 2025 Chin. Phys. B 34 057802
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