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Strain tuning of charge density wave and Mott-insulating states in monolayer VTe2 |
| Wenqian Tu(涂文倩)1,2, Run Lv(吕润)1,2, Dingfu Shao(邵定夫)1, Yuping Sun(孙玉平)3,1,4, and Wenjian Lu(鲁文建)1,† |
1 Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China;
2 University of Science and Technology of China, Hefei 230026, China;
3 High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China;
4 Collaborative Innovation Center of Microstructures, Nanjing University, Nanjing 210093, China |
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Abstract Monolayer vanadium ditelluride (VTe$_{2}$) exhibits a $2\sqrt{3}\times2\sqrt{3}$ charge-density-wave (CDW) order intertwined with a Mott-insulating state. However, the physical mechanisms driving the emergence of the CDW order and the Mott-insulating state are still not well understood. In this study, we systematically investigate the electronic band structure, phonon dispersion, and electron-phonon coupling (EPC) of monolayer VTe$_{2}$ under applied biaxial strain. Our results reveal that the $2\sqrt{3}\times2\sqrt{3}$ CDW phase is metastable in free-standing monolayer VTe$_{2}$ but becomes stabilized under compressive strain below $\varepsilon=-2\%$. The formation of the CDW order originates predominantly from strong EPC, rather than from Fermi-surface nesting. The narrowing of the bandwidth due to the CDW order, combined with correlation effects associated with the V 3d orbitals, collectively drive the system into a Mott-insulating state. Furthermore, we find that tensile strain suppresses the CDW order and induces a superconducting state above a critical strain threshold ($\varepsilon=2\%$). These findings enhance our understanding of correlation physics in monolayer VTe$_{2}$ and provide a pathway for strain-engineered manipulation of quantum phases in two-dimensional transition-metal dichalcogenides.
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Received: 13 April 2025
Revised: 23 June 2025
Accepted manuscript online: 27 June 2025
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PACS:
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71.45.Lr
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(Charge-density-wave systems)
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71.30.+h
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(Metal-insulator transitions and other electronic transitions)
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74.20.Pq
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(Electronic structure calculations)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403203). |
Corresponding Authors:
Wenjian Lu
E-mail: wjlu@issp.ac.cn
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Cite this article:
Wenqian Tu(涂文倩), Run Lv(吕润), Dingfu Shao(邵定夫), Yuping Sun(孙玉平), and Wenjian Lu(鲁文建) Strain tuning of charge density wave and Mott-insulating states in monolayer VTe2 2025 Chin. Phys. B 34 097103
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